Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A local node repair method based on a complete graph minimum bandwidth regeneration code

A node repair and complete graph technology, applied in the computer field, can solve the problems of high node repair bandwidth overhead, large disk I/O overhead, and increased computational complexity, achieving good node repair bandwidth overhead performance, high repair efficiency, and overcoming Fix the effect of high bandwidth overhead

Inactive Publication Date: 2019-04-26
XIDIAN UNIV
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of this method is that when a single node fails in the system, the new node needs to connect k nodes to complete the repair, and the disk I / O overhead is large
However, the disadvantage of this method is that the bandwidth overhead of node repair is high, and the repair process requires codec operations, which increases the computational complexity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A local node repair method based on a complete graph minimum bandwidth regeneration code
  • A local node repair method based on a complete graph minimum bandwidth regeneration code
  • A local node repair method based on a complete graph minimum bandwidth regeneration code

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings.

[0031] refer to figure 1 , the specific implementation steps of the present invention will be further described.

[0032] Step 1. Construct the complete graph minimum bandwidth regeneration code.

[0033] Generate a complete graph minimum bandwidth regeneration code composed of three parameters (n, k, d), where n represents the number of nodes in the distributed storage system, n≥5; k represents that data collectors need to connect to reconstruct the stored data The minimum number of nodes, 2≤k≤n-1; d represents the number of surviving nodes connected to the new node during the node repair process, d=n-1.

[0034] The described generation of a complete graph minimum bandwidth regeneration code composed of three parameters (n, k, d) is specifically carried out according to the following steps:

[0035] Step 1, divide the data packets to be stored into B data blocks, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a local node repair method based on a complete graph minimum bandwidth regeneration code. The implementation steps are as follows: constructing a complete graph minimum bandwidth regeneration code; dividing nodes in the distributed storage system into a plurality of repair groups; constructing a complete graph minimum bandwidth regeneration code in each repair group, packaging the to-be-stored data in blocks and storing the to-be-stored data in each repair group in a coding manner, and when the distributed storage system has single-node failure, connecting a new node with a survival node in the repair group where a failure node is located to complete repair. According to the method, the single failure node in the distributed storage system can be repaired, the repair bandwidth overhead and the disk I / O overhead in the node repair process are reduced, coding and decoding operations are not needed in the repair process, and the repair efficiency is improved.

Description

technical field [0001] The invention belongs to the field of computer technology, and further relates to a local node repair method based on a complete graph minimum bandwidth regeneration code in the field of distributed storage technology. The invention can be applied to fields such as distributed systems and databases. When a single node fails in a distributed storage system, a new node connects to a surviving node in a repair group to realize partial repair of data of the failed node. Background technique [0002] The distributed storage system maintains the reliability of the system by repairing the failed node data. How to reduce the amount of repaired data due to node failure and improve the locality of failed node repair is a key issue that the distributed storage system needs to face. In order to reduce the bandwidth overhead caused by repairing failed nodes, Dimakis et al. abstracted the node repair problem in a distributed storage system into a single-source multi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F11/10
CPCG06F11/1088
Inventor 肖嵩孙沃赵一民李黎钊干红平
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com