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Perovskite battery with nanostructure in the depression of anode grating and preparation method thereof

A perovskite cell, nanostructured technology, applied in photovoltaic power generation, circuits, electrical components, etc., to achieve the effect of mature technology, cost saving, and improved absorption

Active Publication Date: 2022-07-29
JIMEI UNIV
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  • Abstract
  • Description
  • Claims
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Sunlight enters the interior of the device from the glass

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  • Perovskite battery with nanostructure in the depression of anode grating and preparation method thereof
  • Perovskite battery with nanostructure in the depression of anode grating and preparation method thereof
  • Perovskite battery with nanostructure in the depression of anode grating and preparation method thereof

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Embodiment Construction

[0035] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0036] like figure 1 As shown, the perovskite cell with the nanostructure in the depression of the anode grating includes glass 10, and the glass 10 is provided with an anode layer 1, a hole transport layer 2, an active layer 3, an electron transport layer 4 and a cathode layer 5 in sequence, The anode layer 1 is a transparent indium tin oxide (ITO) film or an aluminum oxide zinc (AZO) film, and the cathode layer 5 is a metal film made of gold (Au), silver (Ag), aluminum (Al) and other materials. The anode layer 1 is provided with a grating 6 periodically recessed in the anode layer 1, and an insulating nanostructure 7 is arranged on the surface of the grating 6 recessed, and the material of the insulating nanostructure 7 is silicon dioxide (SiO2), silicon (Si) or PMMA is hemispherical or semi-ellipsoidal in shape, and its diameter is between 70...

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Abstract

The invention discloses a perovskite battery with a nanostructure at the depression of an anode grating, comprising glass, and an anode layer, a hole transport layer, an active layer, an electron transport layer and a cathode layer are arranged on the glass in sequence. The anode layer is provided with a grating periodically recessed in the anode layer, and an insulating nanostructure is provided on the surface of the grating recess. The invention also discloses a preparation method of the solar cell with the nanostructure at the depression of the anode grating. The present invention has the advantages of providing a perovskite cell with a nano-structure at the depression of the anode grating, and utilizing the composite structure of the nano-grating and insulating nano-particles to improve the light absorption of the solar cell for incident light with a wavelength in the range of 500-800 nm. , thereby improving the photoelectric conversion efficiency of solar cells. The recombination efficiency of intercepted carriers at the anode interface is reduced, the carrier collection efficiency is improved, and the series resistance of the battery is reduced. Nanometer gratings and insulating nanostructures can be obtained by only one photolithography process, saving cost.

Description

technical field [0001] The invention relates to the technical field of perovskite solar cells, in particular to a perovskite cell with nanostructures in the depressions of anode gratings and a preparation method thereof. Background technique [0002] Active layer materials for perovskite solar cells (CH 3 NH 3 PbX 3 ,X=Cl,Br,I) has high light absorption efficiency and long carrier diffusion length, and is considered to be the most promising thin-film solar cell technology in the future. At present, the photoelectric conversion efficiency of perovskite solar cells can reach up to 22%. The intrinsic absorption spectrum of perovskite materials is below the wavelength of 800 nm, and the wavelength less than 500 nm is the strong absorption range of perovskite materials. The absorption efficiency of perovskite materials for red and yellow light with wavelengths between 600 and 800 nm is relatively low. [0003] In the prior art, nanoparticles are usually introduced to enhance ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/44H01L51/48
CPCH10K71/233H10K30/87H10K30/80H10K30/82Y02E10/549
Inventor 相春平陈丽萍徐初杰
Owner JIMEI UNIV
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