Light emitting diode epitaxial wafer and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing luminous efficiency, etc., and achieve the effects of improving luminous efficiency, increasing the degree of overlap, and reducing the degree of space separation
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[0028] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0029] An embodiment of the present invention provides a light emitting diode epitaxial wafer, figure 1 It is a schematic structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present invention, as shown in figure 1 As shown, the light-emitting diode epitaxial wafer includes a substrate 1, and a low-temperature buffer layer 2, a high-temperature buffer layer 3, an N-type layer 4, a multi-quantum well layer 5, an electron blocking layer 6, and a P-type layer stacked on the substrate 1 in sequence. Layer 7, the multi-quantum well layer 5 includes a plurality of InGaN quantum well layers 51 and GaN quantum barrier layers 52 alternately grown periodically.
[0030] The plurality of InGaN quantum wel...
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