Bidirectional interlayer isolation well with low power consumption and high reliability
A technology with low power consumption and high reliability, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as reducing the circuit efficiency of boost converters, current leakage of functional circuits, and reducing chip reliability.
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[0013] The technical solutions of the present invention will be described in further detail below through specific implementation methods.
[0014] like figure 1 and figure 2 As shown, a low-power-consumption and high-reliability bidirectional interlayer isolation well includes a substrate 201, a vertical isolation well region and a first buried layer 202 respectively arranged on the substrate 201, and the first buried layer Layer 202 is disposed around the vertical isolation well region, and the vertical isolation well region includes a second buried layer 203, a third buried layer 210, a fourth buried layer 213, a fifth buried layer 214 and a sixth buried layer layer 211, the second buried layer 203 is disposed on the substrate 201, the third buried layer 210 and the sixth buried layer 211 are respectively disposed on the second buried layer 203, the The fourth buried layer 213 and the fifth buried layer 214 are respectively arranged on the third buried layer 210, the fif...
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