Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of gas barrier film

A gas barrier and film technology, which is applied in the field of gas barrier film preparation, can solve the problems of reduced film barrier properties and high production costs, and achieve the effects of inhibiting the reduction of gas barrier properties, low cost and simple operation.

Active Publication Date: 2020-12-18
HEBEI UNIVERSITY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a gas barrier film to solve the problems of reduced barrier property and high production cost of the film obtained by the existing preparation method after being used for a long time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of gas barrier film
  • A kind of preparation method of gas barrier film
  • A kind of preparation method of gas barrier film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A 100 μm thick polyethylene terephthalate (PET) film was used as a flexible transparent substrate, and the PET substrate was ultrasonically cleaned with acetone, ethanol, and deionized water in sequence, and then dried with dry N2, and then the PET The substrate is placed on the surface of the lower electrode plate of the plasma enhanced chemical vapor deposition (PECVD) vacuum chamber. Evacuate the vacuum chamber to a background vacuum of 1.0×10 -3 Pa, then pass Ar gas into the plasma generation chamber of PECVD, and then turn on the radio frequency power supply, under the pressure of 5 Pa, use Ar plasma to carry out surface treatment on the substrate for 60 seconds, then turn off the radio frequency power supply and stop the Ar gas access.

[0039] After that, HMDSO monomer vapor (10 sccm) and O 2 (80 sccm) is passed into the vacuum chamber through different pipelines, and the working pressure is adjusted to 2 Pa through the gate valve. Turn on the power switch of ...

Embodiment 2

[0042] A 100 μm thick PET film was used as a flexible transparent substrate, and the PET substrate was ultrasonically cleaned with acetone, ethanol, and deionized water in sequence, and then dried with N 2 Blow dry, and then place the PET substrate on the surface of the lower electrode plate of the plasma enhanced chemical vapor deposition (PECVD) vacuum chamber. Evacuate the vacuum chamber to a background vacuum of 1.0×10 -3 Pa, then pass Ar gas into the plasma generation chamber of the plasma-enhanced chemical vapor deposition device, then turn on the radio frequency power supply, and use Ar plasma to carry out surface treatment on the substrate under a pressure of 5 Pa for 60 seconds, and then turn off RF power supply and stop the introduction of Ar gas.

[0043] After that, HMDSO monomer vapor (10 sccm) and O 2 (80 sccm) through different pipelines into the plasma-enhanced chemical vapor deposition vacuum chamber of the film, and the working pressure is adjusted to 2 Pa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a gas barrier film. According to the method, a vacuum coating technology is adopted, the gas barrier film is prepared on a base material, at least one process parameter capable of influencing the growth characteristics of the film is selected as a regulation and control parameter, in the preparation process, the regulation and control parameter is continuously changed so as to prepare the gas barrier film which has a gradually-changed structure in the film thickness direction and does not have a sharp boundary. The continuous growth of inner defects of the gas barrier film prepared by the preparation method in the film thickness direction is effectively inhibited, gas diffusion micro-passages in the film tend to be mismatched structures not communicating with one another, so that the gas diffusion rate in the film is effectively reduced, and the film gas barrier property is remarkably improved; and in addition, the film prepared by the method can fully inhibit the reduction of gas barrier property after being bent for many times, so that the method is very suitable for preparation of a flexible high-barrier film and a barrier packagingof a flexible electronic device.

Description

technical field [0001] The invention relates to the technical field of film preparation, in particular to a method for preparing a gas barrier film. Background technique [0002] In recent years, flexible electronic technologies represented by flexible displays, flexible photovoltaics, flexible sensors, flexible lighting, and flexible electrochromic have developed rapidly, and have become an important direction for the development of electronic technology today. However, a prominent issue facing flexible electronics at present is short device lifetime and poor stability. This is mainly due to the fact that flexible electronics, especially those using organic semiconductor materials, are very sensitive to damage caused by water vapor and oxygen. Therefore, it must be encapsulated and protected with a film layer with good barrier effect. [0003] Recent studies have shown that the penetration of barrier materials is a defect-controlling phenomenon, and the barrier properties...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C16/52
CPCC23C14/54C23C16/52
Inventor 路万兵王佩于威武利平丁文革刘海旭滕晓云傅广生
Owner HEBEI UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com