Self-powered semiconductor photocatalytic device with WSA position sensitive structure

Abstract

The invention discloses a self-powered semiconductor photocatalytic device with a WSA position sensitive structure and belongs to the technical field of photoelectrocatalysis. A conventional semiconductor photocatalytic device cannot always keep the catalytic purification effect in an optimal state in the passage process of sunshine duration. The self-powered semiconductor photocatalytic device ischaracterized in that one group of wedge-shaped anodes W and one group of strip-shaped anodes S are distributed on the N<+> region surface of a P<->N<+> silicon chip in a staggered manner; parts between the wedge-shaped anodes W and the strip anodes S are third anodes A; the wedge-shaped anodes W, the strip anodes S and the third anodes A are separated by wedge-shaped anode channels and strip anode channels; the widths a of the wedge-shaped anode channels and the strip anode channels are 100 to 120 [mu]m; the bottoms of the channels are positioned in a P<-> region; the depth b of the channelspositioned at the P<-> region part is 50 to 120 [mu]m; semiconductor nanowire photocatalytic layers are distributed at the bottoms of the channels; the thicknesses of the semiconductor nanowire photocatalytic layers are 1 to 2 [mu]m; the doping concentration of the P<-> region to the N<+> region is changed from thin to thick. The self-powered semiconductor photocatalytic device disclosed by the invention can track sunlight by using the WSA position sensitive structure, so that the absorption amount of light energy is ensured.

Description

technical field [0001] The invention relates to a self-powered semiconductor photoelectric catalytic device with a WSA position-sensitive structure, which can be used to catalyze and purify water bodies, realize self-power supply by using light, and improve catalytic efficiency. Anode) enables the semiconductor photocatalytic device to track sunlight to ensure light energy reception, and belongs to the field of photocatalytic technology. Background technique [0002] Semiconductor photocatalytic technology began with TiO, which came out in 1972 2 (Titanium dioxide) catalyzes the purification of sewage. The technology incorporates TiO 2 The thin film acts as an electrode, and the photolysis of water occurs under the condition of light, so as to play a catalytic role. Later, semiconductor energy band theory was used to explain TiO 2 Photocatalytic mechanism, when the incident photon energy is greater than that of TiO 2 When the semiconductor band gap is wide, the electron...

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Problems solved by technology

However, to make a thin film photoanode, an external power supply provides a bias voltage, which complicates the structure of the photocatalytic device and requires additional energy consumption. In addition, the catalytic area of ​​the catalytic material in the thin film state is limited, and it is easy to deactivate.

[0004] There is still a technical problem in the existing technology. When semiconductor photocatalytic devices are used for catalytic purification of natural water bodies, the light source for photocatalysis is sunlight, and as time passes from morning to night, the intensity and angle of sunlight are changing. The catalytic purification effect of semiconductor photocatalytic devices is not always in the best state

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