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A method for growing gallium nitride-based light-emitting diode epitaxial wafers

A technology of light-emitting diodes and growth methods, which is applied to the growth field of GaN-based light-emitting diode epitaxial wafers, and can solve problems such as warpage differences of epitaxial wafers

Active Publication Date: 2021-01-12
HC SEMITEK SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The embodiment of the present invention provides a method for growing gallium nitride-based light-emitting diode epitaxial wafers, which can solve the problem of different warpages of the various epitaxial wafers formed at the same time using graphite bases in the prior art

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  • A method for growing gallium nitride-based light-emitting diode epitaxial wafers
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  • A method for growing gallium nitride-based light-emitting diode epitaxial wafers

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0038] An embodiment of the present invention provides a method for growing epitaxial wafers of GaN-based light-emitting diodes. figure 1 A flow chart of a method for growing a GaN-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the growth method includes:

[0039] Step 101: Provide at least two kinds of substrates.

[0040] In this embodiment, an aluminum nitride layer doped with oxygen is provided on the substrate, and the doping concentrations of oxygen in the aluminum nitride layers on at least two substrates are different.

[0041] figure 2 A schematic structural view of a substrate provided with an oxygen-doped aluminum nitride layer provided in an embodiment of t...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer growing method, and belongs to the technical field of semiconductors. The method comprises the following steps thatat least two substrates are provided, wherein an aluminum nitride layer doped with oxygen elements is arranged on each substrate, and the doping concentrations of the oxygen elements in the aluminumnitride layers on the at least two substrates are different; a graphite base is provided, wherein a plurality of pockets are arranged on the graphite base; one substrate is placed in each pocket, wherein the doping concentrations of the oxygen elements in the aluminum nitride layers on the substrates placed in the pockets distributed on the same circle are the same, and the doping concentrations of the oxygen elements in the aluminum nitride layers on the substrates placed in the pockets distributed on at least two concentric circles are gradually reduced along the radial directions of the atleast two concentric circles from the circle centers of the at least two concentric circles; and meanwhile, an N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially grown on the aluminum nitride layer on the substrate placed in each pocket, and thus gallium nitride-based light-emitting diode epitaxial wafers are formed. According to the method, the warping of the epitaxial wafers formed in all the pockets can be consistent.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing gallium nitride-based light-emitting diode epitaxial wafers. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. Gallium nitride (GaN) has good thermal conductivity, high temperature resistance, acid and alkali resistance, high hardness and other characteristics, and is widely used in light-emitting diodes of various wavelengths. [0003] The core component of a light-emitting diode is a chip, which includes an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0004] GaN-based light-emitting diode epitaxial wafers generally include a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked on the substrate in sequence. The P-type semiconductor laye...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/22C23C14/54H01L33/00H01L33/12
CPCC23C14/0617C23C14/22C23C14/548H01L33/007H01L33/12
Inventor 丁涛韦春余周飚胡加辉李鹏
Owner HC SEMITEK SUZHOU
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