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Semiconductor storage component and manufacturing method thereof

A storage element and manufacturing method technology, applied in semiconductor devices, electrical components, electrical solid devices, etc., can solve the problems of poor reliability of component leakage current components, dislocation and cracking of substrates or isolation structures, etc., to achieve optimal isolation capability, The effect of reducing leakage current and being less prone to dislocation and cracks

Active Publication Date: 2019-03-05
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the heat treatment is performed to remove the solvent in the flowable dielectric material, due to the stress or shrinkage of the flowable dielectric material, the substrate or the isolation structure in the peripheral circuit area is severely damaged. Dislocation (dislocation) problem, and even cause crack (crack) or rupture
If there are cracks or breaks in the substrate or the isolation structure, the isolation capability of the isolation structure will be degraded, which will cause problems such as leakage current of the component or deterioration of the reliability of the component

Method used

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  • Semiconductor storage component and manufacturing method thereof
  • Semiconductor storage component and manufacturing method thereof
  • Semiconductor storage component and manufacturing method thereof

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Embodiment Construction

[0043] The present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness of layers and regions in the drawings will be exaggerated for clarity. The same or similar reference numerals indicate the same or similar elements, and the details will not be repeated in the following paragraphs.

[0044] figure 1 It is a flowchart of a method for manufacturing a semiconductor storage element according to the first embodiment of the present invention. Figure 2A to Figure 2H It is a schematic cross-sectional view of a method for manufacturing a semiconductor memory device according to the first embodiment of the present invention.

[0045] Please refer to figure 1 versus Figure 2A , First, proceed to step S002 to provide a substrate 100. In an embodiment, the substrate 100 may be, for example, a semi...

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Abstract

A semiconductor storage component comprises a substrate, a plurality of first isolation structures and a plurality of second isolation structures, wherein the substrate comprises a surrounding regionand an array region, the first isolation structures are arranged in a base of the surrounding region, the second isolation structures are arranged in a base of the array region, the material of the first isolation structures is different from the material of the second isolation structures, and the width of each first isolation structure is larger than the width of each second isolation structure.

Description

Technical field [0001] The present invention relates to a semiconductor element and a manufacturing method thereof, and more particularly to a semiconductor storage element and a manufacturing method thereof. Background technique [0002] With the advancement of semiconductor technology, in order to achieve the requirements of reducing costs, simplifying process steps, and saving chip area, it has gradually become a trend to integrate the components of the memory cell array area and the peripheral circuit area on the same chip. As the size of components continues to shrink, in order to prevent short circuits between adjacent components, isolation between components becomes very important. [0003] Generally speaking, flowable dielectric materials are often used as materials for isolation structures. However, when heat treatment is performed to remove the solvent in the flowable dielectric material, due to the stress or shrinkage of the flowable dielectric material, the substrate o...

Claims

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Application Information

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IPC IPC(8): H01L27/11568H01L27/1157
CPCH10B43/30H10B43/35
Inventor 廖政华柯宗杰谢荣裕杨令武
Owner MACRONIX INT CO LTD
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