Semiconductor storage component and manufacturing method thereof
A storage element and manufacturing method technology, applied in semiconductor devices, electrical components, electrical solid devices, etc., can solve the problems of poor reliability of component leakage current components, dislocation and cracking of substrates or isolation structures, etc., to achieve optimal isolation capability, The effect of reducing leakage current and being less prone to dislocation and cracks
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[0043] The present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness of layers and regions in the drawings will be exaggerated for clarity. The same or similar reference numerals indicate the same or similar elements, and the details will not be repeated in the following paragraphs.
[0044] figure 1 It is a flowchart of a method for manufacturing a semiconductor storage element according to the first embodiment of the present invention. Figure 2A to Figure 2H It is a schematic cross-sectional view of a method for manufacturing a semiconductor memory device according to the first embodiment of the present invention.
[0045] Please refer to figure 1 versus Figure 2A , First, proceed to step S002 to provide a substrate 100. In an embodiment, the substrate 100 may be, for example, a semi...
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