Semiconductor structure and forming method thereof
A semiconductor and mask layer technology, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, and semiconductor/solid-state device components, etc., can solve the problem of large difference in groove size, and achieve the effect of improving performance and small difference.
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[0027] As mentioned in the background, the size of the grooves formed by the quadruple patterning process of the sidewalls is quite different.
[0028] Figure 1 to Figure 4 It is a structural schematic diagram of each step of a quadruple patterning forming method.
[0029] Please refer to figure 1 , providing a substrate 100, the substrate 100 has a dielectric layer 101 thereon, the dielectric layer 101 has at least one sacrificial structure 102 thereon, and the sidewall of the sacrificial structure 102 has a first sidewall 103 thereon.
[0030] Please refer to figure 2 , after forming the first sidewall 103, removing the sacrificial structure 102 (see figure 1 ); after the sacrificial structure 102 is removed, a second sidewall 104 is formed on the sidewall of the first sidewall 103 .
[0031] Please refer to image 3 , after forming the second sidewall 104, the first sidewall 103 is removed.
[0032] Please refer to Figure 4 After removing the first spacer 103 , t...
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