Production method for nano-micron silicon carbide whiskers
A silicon carbide whisker and production method technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of low production efficiency, high cost, small output, etc., and achieve high direct crystal ratio, long diameter Uniform, high-yield results
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[0029] Embodiment: select high-purity silicon carbide powder for use. The powder is continuously sent to the gasification platform in the gasification furnace through the conveying pipeline, and the laser generator is turned on to focus the laser on the powder for radiation heating, so that the silicon carbide powder quickly reaches the boiling point temperature above 2700°C and begins to decompose and gasify into Si, Si 2 C, SiC 2 The gasification speed of gas and powder is adapted to the feeding speed as a continuous gasification process. Si, Si 2 C, SiC 2 The gas synthesizes silicon carbide in a high-temperature unsaturated gas flow and produces whisker growth due to the temperature gradient drop. Under the action of the induced draft fan, the successively produced silicon carbide whiskers are sucked into the quencher and rapidly cooled by carbon dioxide gas, so that the temperature of the gas drops below 1200°C, and then the temperature of the material is quickly reduc...
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