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Production method for nano-micron silicon carbide whiskers

A silicon carbide whisker and production method technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of low production efficiency, high cost, small output, etc., and achieve high direct crystal ratio, long diameter Uniform, high-yield results

Inactive Publication Date: 2019-02-26
天水佳吉化工有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of low production efficiency, small output, high cost, and large pollution in the current production methods of nano-micron silicon carbide whiskers at home and abroad, the present invention provides a new high-temperature gasification decomposition-synthetic recrystallization production method

Method used

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Effect test

Embodiment

[0029] Embodiment: select high-purity silicon carbide powder for use. The powder is continuously sent to the gasification platform in the gasification furnace through the conveying pipeline, and the laser generator is turned on to focus the laser on the powder for radiation heating, so that the silicon carbide powder quickly reaches the boiling point temperature above 2700°C and begins to decompose and gasify into Si, Si 2 C, SiC 2 The gasification speed of gas and powder is adapted to the feeding speed as a continuous gasification process. Si, Si 2 C, SiC 2 The gas synthesizes silicon carbide in a high-temperature unsaturated gas flow and produces whisker growth due to the temperature gradient drop. Under the action of the induced draft fan, the successively produced silicon carbide whiskers are sucked into the quencher and rapidly cooled by carbon dioxide gas, so that the temperature of the gas drops below 1200°C, and then the temperature of the material is quickly reduc...

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Abstract

The invention belongs to the technical field of inorganic non-metallic powder materials, and specifically relates to a production method for silicon carbide whiskers. In order to solve problems of lowyield per unit efficiency, high costs, large pollution, easy agglomeration and low quality of present silicon carbide whisker production methods at home and abroad, the novel high temperature gasification physical production method can be provided. The method selects high purity silicon carbide crystals as raw materials which can be decomposed and gasified with high temperature through a laser gasification high temperature growth furnace, and silicon carbide whiskers with diameters of nono-submicron-micron can be obtained through high temperature synthetic growth, cooling and collection. Thus, high purity and high quality alpha-silicon carbide whiskers with particle sizes of 2 nm - 1.5 [mu]m can be produced through the technology, precise control can be achieved, length-diameter ratio canbe 40-200, and nano silicon carbide micro-powder and silicon carbide nanowires can also be obtained by controlling synthesis temperature and synthesis time ranges through the method. The method has less exhaust gas during production and no waste water and solid waste discharge, is less in investment and high in yield, and can be used for large scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of inorganic non-metallic powder materials, and in particular relates to a production method of nano-micron silicon carbide whiskers. Background technique [0002] Silicon carbide whisker is a single crystal fiber with few defects and a certain length-to-diameter ratio. It is a cubic whisker and belongs to the same crystal form as diamond. It has the highest hardness and modulus among the whiskers that have been synthesized so far. Largest, highest tensile strength, highest temperature resistant whisker product. Silicon carbide whiskers are widely used in national defense, aviation, automobile, electronics industry, energy and other fields, and are extremely high-performance reinforcing and toughening materials. Silicon carbide whiskers have a wide range of applications, and the market demand is huge. With the market, especially the national defense, aviation and other industrial sectors, the quality requir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B29/62C30B23/00B82Y40/00
CPCC30B23/007C30B29/36C30B29/62B82Y40/00Y02P20/10
Inventor 刘培佳刘音娜刘亮
Owner 天水佳吉化工有限公司
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