3D memory device and manufacturing method thereof

Abstract

The application discloses a 3D storage device and a manufacturing method thereof. The 3D memory device includes: a substrate; a first stacked structure and a second stacked structure stacked above the substrate, and the first stacked structure and the second stacked structure respectively include a plurality of alternately stacked a gate conductor and a plurality of interlayer insulating layers; and a plurality of channel pillars penetrating through the first stacked structure and the second stacked structure, wherein the first stacked structure and the second stacked structure The channel pillars are connected, and a channel window is formed at the connection, and the size of the channel window can be changed. In the 3D memory device, the upper and lower layers of the stacked structure have different stacking layers, so that the opening size of the channel column at the junction of the upper and lower channel layers becomes larger, and a larger space is obtained in the subsequent punching process. , so as to reduce or avoid the leakage source caused by damage to the channel column at the connection, and also ensure the continuity of the channel layer, thereby improving the yield and reliability of the 3D memory device.

Description

technical field [0001] The present invention relates to memory technology, and more particularly, to 3D memory devices and manufacturing methods thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared w...

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Problems solved by technology

For a stacked structure with a high number of layers, it is difficult to form channel pillars, so it is realized by stacking two or more stacked structures, but this will also cause the channel pillars of the upper and lower layers to be misaligned. Cause damage to the channel column at the corner of the layer-to-layer connection, if not treated, it will form a leakage source, which will make the 3D memory device invalid

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