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Ernst bloch surface wave-based porous silicon biosensor and design method thereof

A biosensor, porous silicon technology, applied in the field of biosensors to achieve the effect of improving sensitivity

Active Publication Date: 2018-12-28
芯曜途科技(珠海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] A key limitation faced by these PSi sensors described above is the ability to efficiently detect both small molecules that readily permeate porous substrates and large molecules that slowly diffuse into or are filtered out by the pores.

Method used

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  • Ernst bloch surface wave-based porous silicon biosensor and design method thereof
  • Ernst bloch surface wave-based porous silicon biosensor and design method thereof
  • Ernst bloch surface wave-based porous silicon biosensor and design method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] like figure 1 As shown, a porous silicon biosensor based on Bloch surface waves includes a silicon substrate layer 1 , a Bragg mirror layer 2 , a buffer layer 3 and a hole-type photonic crystal grating layer 4 sequentially connected from bottom to top.

[0054] like figure 2 As shown, the Bragg reflector layer 2 includes N periodic high-porosity porous silicon layers 201 and low-porosity porous silicon layers 202 arranged alternately;

[0055] like image 3 As shown, the circular hole-type photonic crystal grating layer 4 is provided with a periodic array of air holes 401 arranged in a square lattice; the periodic array of air holes is arranged in a square with a lattice constant a.

[0056] The value of the air hole diameter D is changed from 200nm to 600nm, and the step size is set to 100nm; the value of the hole depth h is changed from 400nm to 800nm, and the step size is also set to 100nm.

[0057] The square lattice constant a is 1000±100 nm.

[0058] The tran...

Embodiment 2

[0065] figure 1 As shown, a porous silicon biosensor based on Bloch surface waves includes a silicon substrate layer 1 , a Bragg mirror layer 2 , a buffer layer 3 and a hole-type photonic crystal grating layer 4 sequentially connected from bottom to top.

[0066] like figure 2 As shown, the Bragg reflector layer includes N high-porosity porous silicon layers 201 and low-porosity porous silicon layers 202 alternately arranged periodically.

[0067] like image 3 As shown, the circular hole-type photonic crystal grating layer 4 is provided with a periodic array of air holes 401 arranged in a square lattice; the periodic array of air holes 401 is arranged in a square with a lattice constant a.

[0068] The value of the air hole diameter D is changed from 200nm to 600nm, and the step size is set to 100nm; the value of the hole depth h is changed from 400nm to 800nm, and the step size is also set to 100nm.

[0069] The square lattice constant a is 1000±100 nm.

[0070] Through...

Embodiment 3

[0074] like figure 1 As shown, a porous silicon biosensor based on Bloch surface waves includes a silicon substrate layer 1 , a Bragg mirror layer 2 , a buffer layer, and a hole-type photonic crystal grating layer 4 sequentially connected from bottom to top.

[0075] like figure 2 As shown, the Bragg reflector layer includes N periodic high-porosity porous silicon layers 201 and low-porosity porous silicon layers 202 arranged alternately;

[0076] like image 3 As shown, the circular hole-type photonic crystal grating layer 4 is provided with a periodic array of air holes 401 arranged in a square lattice; the periodic array of air holes is arranged in a square with a lattice constant a.

[0077] The value of the air hole diameter D is changed from 200nm to 600nm, and the step size is set to 100nm; the value of the hole depth h is changed from 400nm to 800nm, and the step size is also set to 100nm.

[0078] The square lattice constant a is 1000±100 nm.

[0079] Through the...

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Abstract

The invention provides an ernst bloch surface wave-based porous silicon biosensor and a design method thereof. The biosensor comprises a silicon substrate layer, a Bragg reflector layer, a buffer layer and a round hole type photonic crystal grating layer which are sequentially connected from top to bottom; the Bragg reflector layer comprises high-porosity porous silicon layers and low-porosity porous silicon layers, wherein the high-porosity porous silicon layers and the low-porosity porous silicon layers are alternately arranged in N periods; and air hole periodic arrays arranged in a latticemode are arranged on the round hole type photonic crystal grating layer; the air hole periodic arrays are arranged in a lattice constant a. According to the invention, a strict coupling wave analysismethod is utilized, and a simple all-porous silicon multilayer dielectric grating structure is designed on the silicon substrate layer for the first time, so that the sensitivity of the porous silicon biosensor is greatly improved; and the biosensor has the advantages of being high in detection sensitivity, simple in structure, accurate in detection and the like.

Description

technical field [0001] The invention belongs to the technical field of biosensors, and relates to a porous silicon-based multilayer dielectric biosensor, in particular to a porous silicon biosensor based on Bloch surface waves and a design method thereof. Background technique [0002] Optical biosensors offer high sensitivity, fast readout, and low-cost label-free detection of relevant chemicals, which are critical for applications in medical diagnostics, food safety, and homeland security. For the detection of specific label-free biological analytes and small molecules, plasmonic and photonic sensing platforms have emerged as powerful tools. In these platforms, immobilization of the analyte produces a measurable change in the optical properties of the structure, usually due to a change in the refractive index at the sensor surface probed in the evanescent decaying field. Because conventional optical tables utilize planar solids, the total number of available surface bindin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/21
CPCG01N21/21G01N2021/218
Inventor 葛道晗施建培张立强张桢杨宁程广贵杨平丁建宁
Owner 芯曜途科技(珠海)有限公司
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