Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for inhibiting polycrystallizing of ridges of monocrystal diamond

A single crystal diamond and diamond technology, which is applied in the field of single crystal diamond preparation to achieve the effects of reducing the vertical growth height, increasing the growth speed, and suppressing the lateral inward extension speed.

Active Publication Date: 2018-12-11
ZHONGNAN DIAMOND CO LTD
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no relevant report on the method of suppressing polycrystallization of single crystal diamond edges only by strictly controlling various process parameters in the process of preparing single crystal diamond

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for inhibiting polycrystallizing of ridges of monocrystal diamond
  • Method for inhibiting polycrystallizing of ridges of monocrystal diamond
  • Method for inhibiting polycrystallizing of ridges of monocrystal diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The method for suppressing polycrystallization of single crystal diamond edge of the present embodiment, comprises the following steps:

[0037] 1) Preparation and selection of substrate

[0038] The single crystal was diced to obtain several substrates with a (100) orientation and a thickness of 350 μm.

[0039] 2) Pretreatment of the substrate

[0040] The substrate in step 1) is treated with aqua regia, acetone and alcohol ultrasonic cleaning, the number of cleanings for each cleaning medium is 3 times, and the cleaning time is 3 minutes each time, and then select the side with better quality and no impurities and defects as a growth surface.

[0041] 3) Crystal growth

[0042] ① Open the chamber of the MPCVD equipment, and place the substrate processed in step 2) on the surface of the heat sink of the molybdenum abutment, and place it in a square or circular shape based on the center of the abutment; vacuumize to 1 ×10 -3 Below Pa, pass into H 2 , H 2 The flo...

Embodiment 2

[0046] The method for suppressing polycrystallization of single crystal diamond edge of the present embodiment, comprises the following steps:

[0047] 1) Preparation and selection of substrate

[0048] The single crystal was diced to obtain several substrates with a (100) orientation and a thickness of 350 μm.

[0049] 2) Pretreatment of the substrate

[0050] The substrate in step 1) is treated with aqua regia, acetone and alcohol ultrasonic cleaning, the number of cleanings for each cleaning medium is 3 times, and the cleaning time is 3 minutes each time, and then select the side with better quality and no impurities and defects As a growing surface, clean the growing surface and edges with a dust-free swab.

[0051] 3) Crystal growth

[0052] ① Open the chamber of the MPCVD equipment, and place the substrate processed in step 2) on the surface of the heat sink of the molybdenum abutment, and place it in a square or circular shape based on the center of the abutment; vac...

Embodiment 3

[0056] The method for suppressing polycrystallization of single crystal diamond edge of the present embodiment, comprises the following steps:

[0057] 1) Preparation and selection of substrate

[0058] The single crystal was diced to obtain several substrates with a (100) orientation and a thickness of 350 μm.

[0059] 2) Pretreatment of the substrate

[0060] The substrate in step 1) is treated with aqua regia, acetone and alcohol ultrasonically cleaned. The number of cleanings for each cleaning medium is 3 times, and the time for each cleaning is 3 minutes. Then select the side with better quality and no impurities and defects. As a growing surface, clean the growing surface and edges with a dust-free swab.

[0061] 3) Crystal growth

[0062] ① Open the chamber of the MPCVD equipment, and place the substrate processed in step 2) on the surface of the heat sink of the molybdenum abutment, and place it in a square or circular shape based on the center of the abutment; vacu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of preparation of monocrystal diamonds, and particularly relates to a method for inhibiting polycrystallizing of ridges of a monocrystal diamond. The method for inhibiting the polycrystallizing of the ridges of the monocrystal diamond comprises the following steps of (1) preparation and selection of a substrate: slicing the monocrystal to obtain a plurality of substrates, wherein each substrate is oriented as shown in (100), and the thickness is 300 to 350mum; (2) pretreatment of the substrate: sequentially performing acid treatment, acetone and alkaline ultrasonic cleaning on the substrates in step (1), and selecting one surface with higher quality and no impurity defect as the growth surface; (3) growth of crystals. The method has the advantages that by strictly controlling the ratio of flow rate of gas in each step and the power / pressure ratio in the preparation process, the corresponding parameter ratio is designed according to each growth stage; by matching with the strict temperature control, the deposition quality of the monocrystal diamond is finally improved.

Description

technical field [0001] The invention belongs to the technical field of single crystal diamond preparation, and in particular relates to a method for suppressing polycrystallization of single crystal diamond edges. Background technique [0002] Single crystal diamond has a bandgap of 5.5 eV and belongs to ultra-wide bandgap semiconductors. Constant, high Johnson index and Keyse index and other superior properties make it the ultimate material for applications in the field of ultra-high frequency and ultra-high power. Therefore, single crystal diamond has great application requirements in many fields, such as detectors under harsh conditions, micro / nano electromechanical systems, quantum computing, etc., especially has great application advantages in high temperature and high power devices. For this reason, the size and quality of single crystal diamonds are extremely important. [0003] At present, microwave plasma chemical vapor deposition (MPCVD) is the best method to pre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/04C30B25/02
Inventor 卢灿华王志涛陈明张国凯翟东升
Owner ZHONGNAN DIAMOND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com