Metal electrode deposition method

Abstract

The invention discloses a method for depositing a metal electrode. The method comprises: vapor coating a base film on the surface of a wafer; coating a double-layer photoresist layer on the surface of the wafer, and the double-layer photoresist layer covers The bottom film; exposing and developing the double-layer photoresist layer to reveal a specific deposition pattern; sequentially depositing the first metal and the second metal on the deposition pattern; dividing the third metal at different rates depositing on the second metal layer; removing the photoresist layer on the surface of the wafer to form metal electrode patterns on the surface of the wafer. The present invention can better maintain the glue type of the photoresist through different deposition rates and deposition methods, prevent long-term high-energy atoms from bombarding the photoresist, resulting in deformation and collapse of the photoresist, and solve the problem of difficult metal stripping.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic technology, in particular to a method for depositing metal electrodes. Background technique [0002] Metal electrode deposition methods are widely used in semiconductor and micro-nano technology, usually there are electron beam evaporation physical deposition methods and electrochemical methods. The electron beam evaporation method has a good vertical incident direction, and better adhesion between the metal and the semiconductor can be obtained, thereby forming a metal circuit on the surface of the laser chip. When making the front electrode (p-electrode) on the surface of the laser chip, it is necessary to perform a yellow light process to expose specific circuit channels, and then use metal deposition to grow gold. [0003] In the metal deposition process with a photoresist mask, a double-layer photoresist is generally used to form a double-layer undercut structure instead of a sing...

AI Technical Summary

Problems solved by technology

However, when electron beam evaporation deposits > 2um metal, when only one deposition rate is used to achieve the target deposition thickness, regardless of the single-layer photoresist structure or the double-layer photoresist structure, under the influence of metal stress and temperature, the thickness will be different to varying degrees. photoresist distortion

For example: when metal is deposited at a low deposition rate, the metal deposition time is too long, the production efficiency is low, and the production cost is too high. The bombardment of the photoresist by high-energy atoms at a high rate will cause the photoresist to collapse, make metal stripping difficult, and cause metal curling problems

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