Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wafer drying device and method based on Marangoni effect

A wafer drying and wafer drying technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of flammability and toxicity, the complexity of the organic vapor gas supply system and the wafer drying unit, and improve safety , Improve the drying effect and simplify the effect of the steam supply system

Inactive Publication Date: 2018-11-16
TSINGHUA UNIV +1
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Marangoni drying is a more advanced drying technology than rotary drying. However, due to the flammability and toxicity of the IPA steam currently used, a large number of protective measures need to be adopted in the industry to ensure the safe and reliable operation of the drying system. Therefore, the supply of organic steam Gas system and wafer drying unit are both complex

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer drying device and method based on Marangoni effect
  • Wafer drying device and method based on Marangoni effect
  • Wafer drying device and method based on Marangoni effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0032] figure 1 It is a schematic structural diagram of a wafer drying device according to an embodiment of the present invention, figure 2 for figure 1 side view, image 3 for figure 1 top view. Such as Figure 1-3As shown, a wafer drying device includes: a water tank 100, a wafer pulling device 200, a nitrogen source (not shown in the figure), a nitrogen injection system and a controller (not shown in the figure). Wherein, the water tank 100 is used for containing deionized water. The wafer pulling device 200 is used to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a wafer drying device and method based on a Marangoni effect, wherein the wafer drying device comprises: a water tank for containing deionized water; a wafer lifting device forlifting a wafer from the deionized water; a nitrogen gas source; a nitrogen gas spraying system for spraying a hot nitrogen gas onto the meniscus area of the wafer and deionized water when the waferis lifted in order to induce a temperature gradient in the meniscus area to generate a Marangoni flow downward from the meniscus area, so as to peel off a water absorbing film and achieve ultra-cleandrying of the wafer; and a controller for controlling the wafer lifting device, the nitrogen gas source and the nitrogen gas spraying system. The device and method perform Marangoni drying by using the green environment-friendly hot nitrogen gas instead of a combustible explosive and toxic organic steam, avoids the use of a protection device, simplifies a supply system and improves safety. The wafer lifting device is fixed at two positions and lifts the wafer step by step in order to prevent inability to dry a clamp-wafer contact area and to achieve complete wafer drying.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a wafer drying device and drying method based on thermal Marangoni effect. Background technique [0002] Wafer drying methods in the related art mainly include spin drying and Marangoni (Marangoni) drying. [0003] For spin drying, the centrifugal force generated by the rotation of the wafer is used to peel off the water layer adsorbed on the surface of the wafer. But after the rotation, there is still a thick layer of water film on the surface of the wafer, the thickness of which is at least 200nm. This residual water film creates many drying defects. [0004] For Marangoni drying, during the process of pulling the wafer from deionized water, a low surface tension substance or IPA steam is sprayed at the meniscus of the air-liquid interface to induce the Marangoni effect, and the complete peeling off of the entrained water film on the wafer surface is achieved. and d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/02
CPCH01L21/02041H01L21/67034
Inventor 赵德文李长坤路新春
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products