Functional cathode, qled and preparation method, light-emitting module and display device

A functionalized, cathode technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting the performance and stability of QLED devices, maintain interface stability and interface properties, prevent penetration, improve Effect of Electron Injection Efficiency

Active Publication Date: 2020-01-14
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the object of the present invention is to provide a functionalized cathode including an electron transport layer, a QLED device and its preparation method, a light-emitting module and a display device, aiming to solve the gap between the existing electron transport layer and the cathode. The interface between them greatly affects the performance and stability of QLED devices

Method used

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  • Functional cathode, qled and preparation method, light-emitting module and display device
  • Functional cathode, qled and preparation method, light-emitting module and display device
  • Functional cathode, qled and preparation method, light-emitting module and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] A quantum dot light-emitting diode containing a functional cathode, the preparation method is as follows:

[0071] Spin-coating a layer of PEDOT:PSS film on the ITO substrate as a hole injection layer;

[0072] Spin-coating a layer of PVK on the PEDOT:PSS hole injection layer as a hole transport layer;

[0073] Spin-coating a layer of CdSe / ZnS on the PVK hole transport layer as the quantum dot light-emitting layer;

[0074] Spin-coating a layer of ZnO on the CdSe / ZnS quantum dot light-emitting layer as an electron transport layer;

[0075] Then, take 200 uL of 50 mM mercaptopropyltrimethoxysilane ((CH 3 O) 3 SiC 3 H 6 SH) toluene solution was dropped on the above-mentioned ZnO electron transport layer, and a layer of mercaptopropyltrimethoxysilane was spin-coated at 5000 rpm and 30s spin-coating conditions;

[0076] Finally, a layer of Ag is vapor-deposited on the above-mentioned mercaptopropyltrimethoxysilane layer as a cathode to obtain a quantum dot light-emitting diode.

[0077...

Embodiment 2

[0079] A quantum dot light-emitting diode containing a functional cathode, the preparation method is as follows:

[0080] Spin-coating a layer of PEDOT:PSS film on the ITO substrate as a hole injection layer;

[0081] Spin-coating a layer of PVK on the PEDOT:PSS hole injection layer as a hole transport layer;

[0082] Spin-coating a layer of CdSe / ZnS on the PVK hole transport layer as the quantum dot light-emitting layer;

[0083] Spin-coating a layer of ZnO on the CdSe / ZnS quantum dot light-emitting layer as an electron transport layer;

[0084] Then, take 200 uL of 50 mM mercaptopropyltrimethoxysilane ((CH 3 O) 3 SiC 3 H 6 SH) toluene solution was dropped on the above-mentioned ZnO electron transport layer, and a layer of mercaptopropyltrimethoxysilane was spin-coated at 5000 rpm and 30s spin-coating conditions;

[0085] Next, a layer of Ag is evaporated on the above-mentioned mercaptopropyltrimethoxysilane layer as a cathode;

[0086] Finally, 100 uL of (11-mercaptoundecyl)trimethylamm...

Embodiment 3

[0089] A quantum dot light-emitting diode containing a functional cathode, the preparation method is as follows:

[0090] Spin-coating a layer of PEDOT:PSS film on the ITO substrate as a hole injection layer;

[0091] Spin-coating a layer of TFB on the PEDOT:PSS hole injection layer as a hole transport layer;

[0092] Spin-coating a layer of CdSe / ZnS on the TFB hole transport layer as the quantum dot light-emitting layer;

[0093] Spin-coating a layer of ZnO on the CdSe / ZnS quantum dot light-emitting layer as an electron transport layer;

[0094] Then, take 200 uL of 60 mM mercaptopropyltriethoxysilane ((C 2 H 5 O) 3 SiC 3 H 6 SH) toluene solution was dropped on the above ZnO electron transport layer, and a layer of mercaptopropyltriethoxysilane was spin-coated at 5000 rpm, 30s spin coating conditions;

[0095] Next, a layer of Ag is vapor-deposited as a cathode on the mercaptopropyltriethoxysilane layer;

[0096] Finally, take 100 uL of (11-mercaptoundecyl)trimethylammonium bromide dimet...

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Abstract

The invention discloses a functionalized cathode, a QLED and a preparation method thereof, a light-emitting module and a display device. The method comprises the steps of: first depositing a layer of mercaptosilane on the electron transport layer; then depositing a layer of cathode on the mercaptosilane layer to obtain a functionalized cathode. In the present invention, a layer of mercaptosilane is modified between the electron transport layer and the metal electrode. The silicon-oxygen bond in the mercaptosilane can connect with the electron transport layer, and passivate the surface defects of the electron transport layer, while the mercapto group exposed at the other end can interact with the electron transport layer. The metal electrodes are closely connected by covalent bonds. On the one hand, they can serve as the dense nucleation centers of the metal during the metal electrode deposition process, and gradually grow uniform and regular metal electrodes. On the other hand, they can promote the electron transport layer and the metal electrode. Close connection, maintain interface stability and interface properties, prevent metal electrodes from permeating, corroding, oxidizing or falling off in the electronic layer, effectively improving electron injection efficiency and the life and stability of QLED devices.

Description

Technical field [0001] The present invention relates to the technical field of light emitting diodes, in particular to a functionalized cathode containing an electron transport layer, a QLED device and a preparation method, a light emitting module and a display device. Background technique [0002] In recent years, as a new type of high-efficiency luminescent material, colloidal quantum dots (QDs) with nanocrystalline size have received widespread attention. They have various unique optical properties, such as easy tuning of the band gap and wide absorption spectrum. , High spectral purity, stable optical / chemical performance, etc. Light-emitting diodes with quantum dot materials as the light-emitting layer are called Quantum dot light-emitting diodes (QLEDs), which is a new type of light-emitting display technology. In the field of LED display, QLED shows greater advantages compared with the more researched organic light-emitting diode (OLED), such as higher electro-optical con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/82H10K71/00
Inventor 梁柱荣曹蔚然
Owner TCL CORPORATION
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