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Preparation method of high-hardness quaternary infusible high-entropy alloy film

A high-entropy alloy, high-hardness technology, applied in metal material coating process, ion implantation plating, coating and other directions, to achieve the effect of precise control of thin thickness, good density and uniformity, and wide applicability of materials

Active Publication Date: 2018-11-13
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, magnetron sputtering has the advantages of fast deposition speed, low temperature rise of the substrate, wide applicability of materials, high purity, good density and uniformity of the deposited film, and the advantages of precise control of thin thickness and mass production. At present, there are relatively few refractory high-entropy alloys containing high melting point elements prepared by magnetron sputtering.

Method used

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  • Preparation method of high-hardness quaternary infusible high-entropy alloy film
  • Preparation method of high-hardness quaternary infusible high-entropy alloy film
  • Preparation method of high-hardness quaternary infusible high-entropy alloy film

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Embodiment 1

[0034] A method for preparing a high-hardness quaternary refractory high-entropy alloy film provided by the invention comprises the following steps:

[0035] The single-sided polished (100) crystal-oriented P-type Si sheet substrate was ultrasonically cleaned in acetone, alcohol, and deionized water at a frequency of 60 Hz for 15 minutes to remove pollutants on the surface; the cleaned Si sheet substrate was cleaned with Dry it with a hair dryer along the direction of the polished surface so that no deionized water stains are left on the surface; pass the Si wafer clamped on the sample plate into the sample chamber for backsplash for 15 minutes, and use a radio frequency power supply during backsplash. Vacuum the sampling chamber to 1×10 -3 Pa, the Ar flow rate is 30sccm, the power is 70W, the backsplash pressure is 2.0Pa, and the backsplash time is 15min. The purpose is to further clean the Si sheet substrate and improve its surface quality during sputtering; transfer the sa...

Embodiment 2

[0037] A method for preparing a high-hardness quaternary refractory high-entropy alloy film provided by the invention comprises the following steps:

[0038] The single-sided polished (100) crystal-oriented P-type Si sheet substrate was ultrasonically cleaned in acetone, alcohol, and deionized water at a frequency of 60 Hz for 15 minutes to remove pollutants on the surface; the cleaned Si sheet substrate was cleaned with Dry it with a hair dryer along the direction of the polished surface so that no deionized water stains are left on the surface; pass the Si wafer clamped on the sample plate into the sample chamber for backsplash for 15 minutes, and use a radio frequency power supply during backsplash. Vacuum the sampling chamber to 2.0×10 -3Pa, the Ar flow rate is 30sccm, the power is 80W, the backsplash pressure is 2.0Pa, and the backsplash time is 10min. The purpose is to further clean the Si sheet substrate and improve its surface quality during sputtering; transfer the s...

Embodiment 3

[0040] A method for preparing a high-hardness quaternary refractory high-entropy alloy film provided by the invention comprises the following steps:

[0041] The single-sided polished (100) crystal-oriented P-type Si sheet substrate was ultrasonically cleaned in acetone, alcohol, and deionized water at a frequency of 70 Hz for 20 minutes to remove pollutants on the surface; the cleaned Si sheet substrate was cleaned with Dry it with a hair dryer along the direction of the polished surface so that no deionized water stains are left on the surface; pass the Si wafer clamped on the sample plate into the sample chamber for backsplash for 15 minutes, and use a radio frequency power supply during backsplash. Vacuum the sampling chamber to 4.0×10 -3 Pa, the Ar flow rate is 30sccm, the power is 70W, the backsplash pressure is 2.0Pa, and the backsplash time is 15min. The purpose is to further clean the Si sheet substrate and improve its surface quality during sputtering; transfer the ...

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Abstract

The invention discloses a preparation method of a high-hardness quaternary infusible high-entropy alloy film. The preparation method comprises the following steps of cleaning and blow-drying a matrixSi wafer and putting the matrix Si wafer into a sample injection chamber to conduct reverse sputtering to further clean surface impurities; transmitting the matrix to a spluttering cavity, mounting atarget and conducting heating and continuous vacuum pumping on the matrix Si wafer after high-vacuum pumping; introducing argon, directly connecting the target with a DC power supply, setting the sputtering power and bias voltage, adjusting the working air pressure and conducting pre-sputtering to clean impurities on the surface of the target; opening a sample disk baffle and conducting rotation to start sputtering; cooling a sample to the indoor temperature in a vacuum environment of the sputtering cavity after completion of sputtering and then taking the sample out; and testing the nanomdentation hardness of the film. According to the preparation method, the film is deposited through the DC magnetron sputtering method, and the quaternary infusible high-entropy alloy film with the smoothsurface and uniform film thickness is obtained. The film is composed of BCC and a few of HCP solid solution.

Description

technical field [0001] The invention belongs to the technical field of alloy materials and their preparation, and in particular relates to a method for preparing a high-hardness quaternary refractory high-entropy alloy film. Background technique [0002] High entropy alloy is a kind of alloy with high mixed entropy, which is composed of 4 or more elements in equimolar ratio or near equimolar atomic ratio and generally forms a solid solution. The content of each element is from 5at.% to 35at. %, there are generally several common crystal structures of FCC, BCC, HCP and amorphous. Compared with traditional alloys, high-entropy alloys have high strength, hardness, excellent wear resistance, corrosion resistance, radiation resistance, and high temperature thermal stability. Refractory high-entropy alloys are a type of high-entropy alloys with high high-temperature strength and hardness composed of Ti, Zr, Nb, Ta, Mo and other high-melting elements. The four core effects of hig...

Claims

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Application Information

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IPC IPC(8): C23C14/16C23C14/35
CPCC23C14/165C23C14/35
Inventor 宋忠孝宋宝睿从中浩李雁淮陈坚高波
Owner XI AN JIAOTONG UNIV
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