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A kind of thin film photovoltaic device and its preparation method

A thin-film photovoltaic and device technology, used in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve the problems of low parallel resistance, high series resistance, low photocurrent, etc., to reduce the potential barrier and increase the electrical coupling. , the effect of increasing the carrier mobility

Active Publication Date: 2019-12-10
TCL CORPORATION
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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a thin film photovoltaic device and a preparation method thereof, aiming at solving the problem that the existing thin film photovoltaic device has a relatively high series resistance and a low parallel resistance, resulting in relatively low internal photocurrent. low problem

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  • A kind of thin film photovoltaic device and its preparation method
  • A kind of thin film photovoltaic device and its preparation method
  • A kind of thin film photovoltaic device and its preparation method

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Embodiment Construction

[0036] The present invention provides a thin-film photovoltaic device and its preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0037] A preferred embodiment of the preparation method of a thin film photovoltaic device of the present invention, including:

[0038] Step A, depositing a light absorbing layer on the first electrode;

[0039] Step B, depositing an electron extraction layer on the light-absorbing layer, the material of the electron extraction layer is a cross-linked nano-particle film formed by cross-linking the nano-particle film;

[0040] Step C, evaporating a second electrode on the electron extraction layer to obtain a thin film photovoltaic device.

[0041] Specifical...

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Abstract

The invention discloses a thin-film photovoltaic device and a preparation method thereof, wherein the method comprises: step A, depositing a light-absorbing layer on a first electrode; step B, depositing an electron extraction layer on the light-absorbing layer, and the electron extraction layer The material is a cross-linked nano-particle film formed by cross-linking treatment of the nano-particle film; step C, evaporating the second electrode on the electron extraction layer to obtain a thin-film photovoltaic device. In the present invention, the obtained cross-linked nanoparticle film is applied to the thin-film photovoltaic device prepared by the solution method, which can significantly increase the parallel resistance in the photovoltaic device and reduce the series resistance in the photovoltaic device, thereby increasing the photocurrent of the fill factor in the thin-film photovoltaic device , thereby improving the photoelectric conversion efficiency of the device.

Description

technical field [0001] The invention relates to the field of photovoltaic devices, in particular to a thin-film photovoltaic device and a preparation method thereof. Background technique [0002] Photovoltaic devices refer to devices that can directly convert light energy into electrical energy by using the photovoltaic effect at the semiconductor interface. [0003] In the process of preparing photovoltaic devices by solution method, oxide nanoparticles are one of the important solutions for forming corresponding oxide films, mainly because oxide nanoparticles (or spherical oxide nanocrystals) have good crystallinity, which ensures On the other hand, due to the good self-assembly of oxide nanoparticles into films, low-cost coating preparation processes can be applied. Common oxide nanoparticles include zinc oxide (ZnO x ) nanoparticles, titanium oxide (TiO x ) Nanoparticles, etc., the nanoparticle film is usually used in thin film photovoltaic devices as a semiconductor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L51/42H01L51/48H01L51/46
CPCH01L31/0216H01L31/0445H01L31/1804H01L31/1828H10K30/00H10K2102/00Y02E10/549Y02E10/543Y02E10/547Y02P70/50
Inventor 陈崧钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
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