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Thin film transistor and manufacturing method thereof

A thin-film transistor and thin-film technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as poor performance of thin-film transistors, reduce potential barriers, increase carrier mobility, and improve electrical performance.

Active Publication Date: 2018-10-23
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the object of the present invention is to provide a thin film transistor and its preparation method, aiming at solving the problem of poor performance of the existing thin film transistor

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  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof

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Embodiment Construction

[0036] The present invention provides a thin film transistor and its preparation method. In order to make the object, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0037] A preferred embodiment of a method for preparing a thin film transistor of the present invention, wherein the specific preparation process of the semiconductor layer material includes:

[0038] Step A, dispersing the nanoparticles in a solvent, and stirring evenly to obtain a nanoparticle solution;

[0039] The step A is specifically to disperse the nanoparticles in the solvent at a mass concentration of 1-100 mg / ml, and stir until they are evenly mixed to prepare a nanoparticle solution that can be used for film formation by the solution method. Wherein, the nan...

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Abstract

The invention discloses a thin film transistor and a manufacturing method thereof. The semiconductor layer material of the thin film transistor is a cross-linked nano-particle film formed through carrying out crosslinking treatment on a nanoparticle film. The cross-linked nano-particle film is applied in the semiconductor layer of the thin film transistor so that a hot carrier effect can be effectively reduced and the performance of the thin film transistor is greatly increased.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a thin film transistor and a preparation method thereof. Background technique [0002] A thin film transistor (thin film transistor, TFT), as a switching element, is widely used in electronic devices such as liquid crystal displays. [0003] In the process of preparing thin film transistors by solution method, oxide nanoparticles are one of the important solutions to form the corresponding oxide film, mainly because oxide nanoparticles (or spherical oxide nanocrystals) have good crystallinity, which ensures On the other hand, due to the good self-assembly of oxide nanoparticles into films, low-cost coating preparation processes can be applied. Common oxide nanoparticles include zinc oxide (ZnO x ) nanoparticles, titanium oxide (TiO x ) nanoparticles, etc., the nanoparticle film is usually used in the semiconductor layer of the thin film transistor. [0004] Nevertheless,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/786
CPCH01L29/0657H01L29/0665H01L29/66742H01L29/786
Inventor 陈崧钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
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