A kind of method for preparing anti-oxidation uranium tantalum film on metal uranium surface

A metal uranium and uranium oxide technology, applied in the field of material surface treatment, can solve the problems of oxidative corrosion and failure of metal uranium materials, achieve the effects of excellent corrosion resistance, inhibit oxidation failure, and improve atmospheric storage life

Active Publication Date: 2020-06-09
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the metal uranium material is easily oxidized and corroded due to the reaction with the environment medium, and to provide a method for preparing an oxidation-resistant uranium-tantalum film on the surface of the metal uranium

Method used

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Examples

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specific Embodiment approach 1

[0009] Specific implementation mode 1: This implementation mode is a method for preparing an oxidation-resistant uranium-tantalum film on the surface of metal uranium, which is specifically completed according to the following steps:

[0010] Using a uranium-tantalum alloy target as a target material, an oxidation-resistant uranium-tantalum film is prepared on the surface of a metal uranium film or a metal uranium block by DC magnetron sputtering; the tantalum content in the oxidation-resistant uranium-tantalum film is 3 at.% to 12 at.% .

specific Embodiment approach 2

[0011] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is: the uranium-tantalum alloy target is used as the target material, and the oxidation-resistant uranium-tantalum film is prepared on the surface of the metal uranium film by DC magnetron sputtering. Specifically, the preparation is as follows :

[0012] 1. Ultrasonic cleaning the monocrystalline silicon substrate in acetone, ethanol and deionized water for 5 minutes to 60 minutes respectively, and drying with high-pressure nitrogen to obtain a clean monocrystalline silicon substrate;

[0013] 2. Place the clean single crystal silicon substrate in the center of the sample stage, adjust the distance between the metal uranium target and the center of the sample stage to be 5cm to 20cm, and the normal line of the metal uranium target and the plane of the sample stage form an angle of 45°; adjust the uranium-tantalum alloy The distance between the target and the center of the sample sta...

specific Embodiment approach 3

[0022] Specific embodiment three: the differences between this embodiment and specific embodiment two are: the purity of the metal uranium target described in step two is 99.99%; the purity of the uranium-tantalum alloy target is ≥99%, and the tantalum in the uranium-tantalum alloy target The content is 3at.%~15at.%. Others are the same as in the second embodiment.

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Abstract

The invention provides a method for preparing an anti-uranium-tantalum-oxide film on the metal uranium surface, belongs to the technical field of material surface treatment, and particularly relates to a method for preparing an anti-uranium-tantalum-oxide film for protecting a metal uranium material surface, aiming at solving the problem that a metal uranium material has active chemical property,and is extremely easily oxidized, etched and failed in application. The method comprises the step of preparing an anti-uranium-tantalum-oxide film on the surface of a metal uranium film or metal uranium block from a uranium-tantalum alloy target which serves as a target by adopting direct-current magnetron sputtering; or preparing the anti-uranium-tantalum-oxide film on the surface of a metal uranium film or metal uranium block from a metal uranium target or metal tantalum target which serves as a target by adopting dual magnetron sputtering co-deposition method. The uranium-tantalum film hasexcellent antioxidation performance, has excellent interface bonding force and chemical compatibility with a uranium material. The method is mainly used for preparing an anti-uranium-tantalum-oxide film on the metal uranium surface.

Description

technical field [0001] The invention belongs to the technical field of material surface treatment, and in particular relates to a preparation method of an anti-oxidation uranium tantalum film for surface protection of metal uranium materials. Background technique [0002] Uranium is an important nuclear material. The energy levels of the 5f, 6d and 7s electron shells outside the nucleus are very close to each other, which makes uranium have very complex chemical properties and can be easily absorbed by O at room temperature. 2 、H 2 Oxygen and other media are oxidized and corroded, and the active chemical properties have brought great challenges to the application of uranium materials. Material surface modification is considered as an important means to improve the corrosion resistance of uranium. Usually, diffusion heat treatment methods such as ion implantation or plasma nitriding are used to form a passivation layer of uranium nitride with good interfacial bonding force ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16
CPCC23C14/165C23C14/352
Inventor 柯博邢丕峰郑凤成李宁杨蒙生赵利平易泰民王丽雄
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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