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A method of auxiliary control of ion implantation time based on Monte Carlo simulation

A Monte Carlo simulation and auxiliary control technology, which is applied in chemical instruments and methods, computer-aided design, CAD numerical modeling, etc., can solve the problems of low controllability of oxygen vacancies and the inability to obtain the relationship between time and concentration in SRIM simulation. , to achieve the effect of auxiliary control

Active Publication Date: 2020-12-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] In view of the above-mentioned problems or deficiencies, in order to solve the technical problems that the controllability of obtaining oxygen vacancies through ion implantation is not high in the experiment and the relationship between time and concentration cannot be obtained by SRIM simulation, the present invention provides an auxiliary control ion based on Monte Carlo simulation. method of injecting time

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  • A method of auxiliary control of ion implantation time based on Monte Carlo simulation
  • A method of auxiliary control of ion implantation time based on Monte Carlo simulation
  • A method of auxiliary control of ion implantation time based on Monte Carlo simulation

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[0018] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. Set the experimental conditions: the implantation energy of argon ions is 300eV, and the implantation dose per second is 10 15 ion / cm 2 , taking 1 second as a unit time, when the oxygen vacancy concentration reaches 10% of the initial strontium titanate atomic concentration, the crystal is considered to be amorphized.

[0019] First, use SRIM to simulate argon ion implantation into strontium titanate to obtain the number of vacancies in each atom, and then calculate the oxygen vacancy concentration V in the first unit time 1 and the thickness of the amorphized layer D 1 = 12.266 Angstroms. Oxygen vacancies are distributed as figure 1 The hollow curve is shown.

[0020] According to the sputtering ratio of the simulation results in the previous step, calculate the density ρ of strontium titanate after etching 1 =4.886g / cm 3 and thickness d...

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Abstract

The invention belongs to the application field of ion implantation, and specifically relates to a method for assisting in controlling ion implantation time based on Monte Carlo simulation. Based on SRIM, the present invention simulates the implantation of argon ions into strontium titanate crystal, regards each unit time as a segment, and controls the ion implantation time or dosage and other factors to precisely control the concentration of oxygen vacancies in combination with repeated iterative calculations. Meaningful control time. Solved the problem that the time parameter cannot be set in the SRIM simulation. By dividing the time into each unit time and continuously advancing the solution with the unit time, a relationship between time and the thickness of the amorphous layer was finally obtained, which can assist in the actual experiment process. Ion implant dose control. It avoids the decision of the injection time only depending on the experimenter's experience in the experiment, and is a set of simulation calculation methods with practical experimental significance.

Description

technical field [0001] The invention belongs to the application field of ion implantation, and specifically relates to a method for assisting in controlling ion implantation time based on Monte Carlo simulation. Background technique [0002] Monte Carlo method, also known as random sampling or statistical experiment method. Its basic idea is to obtain the frequency of occurrence of something or the average value of this random variable through experiments, so as to obtain the solution of this problem. Since traditional empirical methods cannot approximate real physical processes, it is difficult to obtain satisfactory results from them. The Monte Carlo method can truly simulate the actual physical process, so the results obtained are very consistent with the actual situation. Commonly used Monte Carlo programs include MORSE, EGS, SRIM, etc. As a set of open source ion implantation simulation software, SRIM is currently the most widely used ion implantation simulation soft...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B31/22G06F30/20G06F111/10G06F119/12
CPCC30B29/32C30B31/22G06F30/20
Inventor 张万里王放曾慧中
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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