CMOS single photon avalanche diode detector of near-infrared wide spectrum and manufacturing method thereof

A single-photon avalanche, diode technology, applied in the direction of electric solid device, semiconductor device, final product manufacturing, etc., can solve the problem of inability to detect near-infrared short-wave photons, achieve low power consumption, high photon detection efficiency, strong anti-interference ability Effect

Active Publication Date: 2018-09-07
武汉光迹融微科技有限公司
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Problems solved by technology

[0003] The present invention aims at the problem that traditional CMOS SPAD detectors cannot detect near-infrared short-wave photons, and proposes a near-infrared wide-spectrum CMOS single-photon avalanche diode detector

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  • CMOS single photon avalanche diode detector of near-infrared wide spectrum and manufacturing method thereof
  • CMOS single photon avalanche diode detector of near-infrared wide spectrum and manufacturing method thereof
  • CMOS single photon avalanche diode detector of near-infrared wide spectrum and manufacturing method thereof

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specific Embodiment 1

[0036] The specific size of the SPAD detector of the present invention is given: the overall SPAD device is 26 μm long and 11 μm deep. Among them, the local heavily doped P+ buried layer region 2 directly above the P-type substrate 1 and between the P- epitaxial layer region 3 is 9 μm long, and the deep N well region 4 in the middle above the P- epitaxial layer 3 is 10 μm long, and the deep N well The central N well region 11 in the middle above the region 4 is 2 μm long, the first P well region 10 outside the central N well region 11 is 3 μm long, the side N well region 9 outside the deep N well region 4 is 1 μm long, and the deep N well region 4 The heavily doped N+ region 8 on the surface is 11 μm long, the second P well region 12 on the outside above the P- epitaxial layer is 2 μm long, and the heavily doped P+ region 6 on the surface of the second P well region 12 is 1 μm long, and the P+ region 6 is two The shallow trench isolation (STI) regions 5 and 7 on the side are 0...

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Abstract

The present invention discloses a CMOS single photon avalanche diode detector of a near-infrared wide spectrum. The detector comprises a cylindrical P-type substrate, a P epitaxial region, a deep N well region, a center N well region, an N+ region and an annular first P well region, a side N well region, a second P well region and a P+ region which are coaxially arranged. The SPAD (single photon avalanche diode) detector forms a deep main avalanche region between the deep N well region and the P- epitaxial region to detect near-infrared shortwave photons; and the deep N well is internally provided with two shallow secondary avalanche ring regions capable of detecting the shortwave photons so as to achieve detection of wide spectrum photons from blue light to the near-infrared shortwaves. The CMOS single photon avalanche diode detector can be manufactured by employing a standard CMOS technology, and is high integration, low in power loss and high in capacity of resisting disturbance.

Description

Technical field [0001] The invention relates to a near-infrared broad spectrum CMOS single-photon avalanche photodiode detector, which belongs to the field of photoelectric technology. Background technique [0002] Single-photon avalanche diode (SPAD) detection devices have the advantages of high detection efficiency, fast response speed, and low power consumption, and have been widely used in biomedicine, military, optical communications and other fields. SPAD detectors based on CMOS technology can integrate SPAD devices and quenching, counting and readout circuits into one chip, thereby realizing a low-cost, highly integrated and highly reliable array detector. However, in specific application fields such as distance measurement, fluorescence lifetime analysis, optical tomography, and fiber optic communications, in order to avoid damage to the human eye from the laser light source of the SPAD detector, the laser wavelength is generally required to be in the infrared band o...

Claims

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Application Information

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IPC IPC(8): H01L27/144H01L31/0352H01L31/107H01L31/18
CPCH01L27/1443H01L31/03529H01L31/107H01L31/1804Y02P70/50
Inventor 赵庭晨徐跃袁丰
Owner 武汉光迹融微科技有限公司
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