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A ni-doped biovo 4 Thin film photoanode, its preparation method and use

A photoanode, thin film technology, applied in photosensitive equipment, photovoltaic power generation, circuits, etc., can solve the problem of not reaching the ideal value, and achieve the effect of good photoelectric performance, simple steps, and improved migration rate

Active Publication Date: 2020-05-22
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] metal doping method on BiVO 4 The improvement of the photoreactivity of the most significant, but still not reach the ideal value, BiVO 4 There is still a lot of room for improvement in the photoreactivity of

Method used

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  • A ni-doped biovo <sub>4</sub> Thin film photoanode, its preparation method and use
  • A ni-doped biovo <sub>4</sub> Thin film photoanode, its preparation method and use
  • A ni-doped biovo <sub>4</sub> Thin film photoanode, its preparation method and use

Examples

Experimental program
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Effect test

Embodiment 1

[0036] (1) Add 3.32g potassium iodide to 50mL deionized water, stir until fully dissolved, add concentrated nitric acid (65wt%) dropwise to the solution, and adjust the pH value to 1.7;

[0037] (2) Set the molar ratio of nickel and bismuth in the solution to be 5:100. Weigh 0.9702g of bismuth nitrate pentahydrate and 0.0291g of nickel nitrate hexahydrate, add them into the potassium iodide solution, and stir until the solids are completely dissolved.

[0038] (3) Dissolve 0.4968g of p-benzoquinone in 20mL of absolute ethanol, stir and dissolve, pour into the solution obtained in step (2), and continue to stir for 30min;

[0039] (4) Ultrasonic the FTO conductive glass in absolute ethanol and deionized water for 30min respectively, and dry at room temperature; the mixed solution in step (3) is electrodeposited, and the working electrode is FTO conductive glass, which is deposited on the surface of the electrode body A layer of BiOI is obtained; the reference electrode and the...

Embodiment 2

[0050] (1) Add 3.32g potassium iodide to 50mL deionized water, stir until fully dissolved, add concentrated nitric acid (65wt%) dropwise to the solution, and adjust the pH value to 1.7;

[0051] (2) Set the molar ratio of nickel and bismuth in the solution to be 1:100, weigh 0.9702g bismuth nitrate pentahydrate and 0.0058g nickel nitrate hexahydrate, join in the potassium iodide solution of step (1), stir until the solid is completely dissolve.

[0052] (3) Dissolve 0.4968g of p-benzoquinone in 20mL of absolute ethanol, stir and dissolve, pour into the solution obtained in step (2), and continue to stir for 30min;

[0053] (4) Ultrasonic the FTO conductive glass in absolute ethanol and deionized water for 30min respectively, and dry at room temperature; the mixed solution in step (3) is electrodeposited, and the working electrode is FTO conductive glass, which is deposited on the surface of the electrode body A layer of BiOI is obtained; the reference electrode and the counte...

Embodiment 3

[0059] (1) Add 3.32g potassium iodide to 50mL deionized water, stir until fully dissolved, add concentrated nitric acid (65wt%) dropwise to the solution, and adjust the pH value to 1.7;

[0060] (2) Set the molar ratio of nickel and bismuth in the solution to be 3:100. Weigh 0.9702g of bismuth nitrate pentahydrate and 0.0174g of nickel nitrate hexahydrate, add them into the potassium iodide solution, and stir until the solids are completely dissolved.

[0061] (3) Dissolve 0.4968g of p-benzoquinone in 20mL of absolute ethanol, stir and dissolve, pour into the solution obtained in step (2), and continue to stir for 30min;

[0062] (4) Ultrasonic the FTO conductive glass in absolute ethanol and deionized water for 30min respectively, and dry at room temperature; the mixed solution in step (3) is electrodeposited, and the working electrode is FTO conductive glass, which is deposited on the surface of the electrode body A layer of BiOI is obtained; the reference electrode and the...

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Abstract

The invention discloses a Ni-doped BiVO4 film photoanode. The Ni-doped BiVO4 film photoanode is characterized in that a layer of film formed by Ni-doped BiVO4 nano-particles is arranged on an electrode body. The invention further discloses a preparation method for the Ni-doped BiVO4 film photoanode, and an application of the Ni-doped BiVO4 film photoanode in photoelectrochemical water decomposition.

Description

technical field [0001] The invention belongs to the field of photoelectric catalysis and relates to a Ni-doped BiVO 4 Thin film photoanode, its preparation method and use. Background technique [0002] The increasing environmental problems and energy crisis have prompted people to turn their attention to the development and utilization of renewable energy solar energy, and the research on semiconductor catalysts provides a feasible path, that is, using solar energy as an energy source, and then using photocatalysis The reaction is that the carrier converts it into chemical energy and stores it in elemental hydrogen. The process is clean and pollution-free, and it is one of the most effective ways to solve environmental and energy problems. [0003] In 1972, Fujishima and Honda discovered TiO 2 The electrode can be applied to photocatalytic splitting of water to produce hydrogen. Subsequently, semiconductor materials such as tantalate and niobate came out one after anothe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042
CPCH01G9/2027Y02E10/542
Inventor 邹吉军孔德超潘伦张香文王莅
Owner TIANJIN UNIV
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