A carrier-enhanced igbt device with optimized electric field in the body
A carrier, enhanced technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient turn-off capability, reduced turn-off time, poor reliability, etc., to reduce the impact ionization rate, reduce the turn-off time, the effect of improving withstand voltage and operating reliability
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[0029] A carrier-enhanced IGBT device with optimized internal electric field, such as figure 2As shown, its cellular structure includes a metal collector 7, a P+ collector region 6, an N-type buffer layer 5, an N-drift region 4, and a metal emitter 11 stacked sequentially from bottom to top; the N-drift region 4 The middle region of the top layer is provided with a P+ hole storage layer 8, the two sides of the P+ hole storage layer 8 are respectively provided with a P+ base region 2, and the top layer of the P+ base region 2 is provided with an N+ emission region 1; The region 2 and the N+ emitter region 1 are in contact with the P+ hole storage layer 8 through the metal emitter 11; a gate structure is arranged between the P+ base region 2 and the N+ emitter region 1 and the P+ hole storage layer 8, and the The gate structure includes a gate electrode 9 and a gate dielectric layer 3. The gate dielectric layer 3 extends into the N-drift region 4 along the vertical direction of...
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