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Memory and method of forming the same

A memory, channel direction technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as poor performance of split-gate flash memory, avoid the decline of electron retention ability, avoid too small tip angle, improve The effect of erasing efficiency

Active Publication Date: 2021-03-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of existing split-gate flash memory is poor

Method used

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  • Memory and method of forming the same

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Experimental program
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Effect test

Embodiment Construction

[0022] As mentioned in the background, the performance of the memory formed by the prior art is relatively poor.

[0023] Figure 1 to Figure 3 It is a schematic diagram of the structure of a memory formation process.

[0024] refer to figure 1 , providing a semiconductor substrate 100, the semiconductor substrate 100 includes an erasing region X1 and a floating gate region X2, the floating gate region X2 is adjacent to the erasing region X1 and is located on both sides of the erasing region X1; The erasing gate structure 130 on X1, the floating gate structure 110 respectively located on the floating gate region X2, and the sidewall 120 located on the floating gate structure 110, the floating gate structure 110 has a back erase in the channel direction. In addition to the first sidewall 1111 of the gate structure 130, the sidewall 120 has a second sidewall 1201 facing away from the erase gate structure 130 in the channel direction; An isolation film 140 is formed on the out...

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Abstract

A memory and a method for forming the same, comprising: forming an erasing gate structure, a floating gate structure, and sidewalls located on the floating gate structure, the floating gate structure and the sidewalls respectively having back-erasing The first sidewall and the second sidewall of the gate structure, the first sidewall is planar, the first sidewall is recessed toward the erasing gate structure relative to the second sidewall, the first sidewall and the second sidewall Discontinuous; an isolation film is formed on the outer surface of the erasing gate structure, floating gate structure and sidewall, and the surface of the semiconductor substrate, and the isolation film covers the first side wall and the second side wall; a barrier film is formed on the surface of the isolation film Etch back the barrier film to expose the isolation film on the surface of the semiconductor substrate to form a barrier layer covering the first sidewall and the second sidewall; use the barrier layer as a mask to etch the isolation film to expose the surface of the semiconductor substrate, forming an isolation layer covering the first sidewall and the second sidewall; then removing the barrier layer. The method improves the performance of the memory.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a memory and a forming method thereof. Background technique [0002] Flash memory is an important device in integrated circuit products. The main feature of flash memory is that it can keep stored information for a long time without applying voltage. Flash memory has the advantages of high integration, fast access speed and easy erasing, so it is widely used. [0003] Flash memory is classified into two types: stack gate flash memory and split gate flash memory. The stacked gate flash memory has a floating gate and a control gate above the floating gate. The stacked gate flash memory has the problem of over-erasing. Different from the stacked gate flash memory, the split gate flash memory forms a word line as an erasing gate on one side of the floating gate. The split-gate flash memory can effectively avoid the over-erasing effect. [0004] However, the existing s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11517
CPCH10B41/00
Inventor 于涛王百钱
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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