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N-VO2/p-NiO-based heterogeneous structure and preparation method thereof

A heterogeneous structure, VO2 technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex drive circuits, low switching speed, and low service life, and achieve large film forming area and low resistivity. The effect of reducing and lowering the substrate temperature

Inactive Publication Date: 2018-08-21
SHENYANG INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high-power devices in the prior art have poor flexibility, low switching speed, high driving power, complex driving circuit, low switching frequency, and low service life.

Method used

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  • N-VO2/p-NiO-based heterogeneous structure and preparation method thereof
  • N-VO2/p-NiO-based heterogeneous structure and preparation method thereof
  • N-VO2/p-NiO-based heterogeneous structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1), the flexible stainless steel substrate was ultrasonically cleaned with ethanol and deionized water in sequence, the time of ultrasonic cleaning with ethanol was 5 minutes, the time of ultrasonic cleaning with deionized water was 5 minutes, blown dry with nitrogen gas, and sent to the magnetron sputtering reaction chamber. 1.0×10 -3 Under the condition of Pa vacuum, AZO transparent conductive film was deposited and prepared on its flexible stainless steel; the process parameter conditions were: argon and oxygen were used as the mixed gas reaction source, the flow ratio of argon and oxygen was 8:1, zinc oxide doped Doped aluminum is used as the target material, the purity of the reactive sputtering zinc oxide doped aluminum target material is 99.9%, the preparation temperature is 200° C., and the preparation time is 60 minutes to obtain a flexible stainless steel substrate / second AZO transparent conductive film.

[0035] 2), using a magnetron sputtering reaction chamb...

Embodiment 2

[0040] 1), the flexible stainless steel substrate was ultrasonically cleaned with ethanol and deionized water in sequence, the time of ultrasonic cleaning with ethanol was 5 minutes, the time of ultrasonic cleaning with deionized water was 5 minutes, blown dry with nitrogen gas, and sent to the magnetron sputtering reaction chamber. 1.0×10 -3 Under the condition of Pa vacuum, AZO transparent conductive film was deposited and prepared on the flexible stainless steel; the process parameter conditions were: argon and oxygen were used as the mixed gas reaction source, the flow ratio of argon and oxygen was 9:1, zinc oxide doped Doped aluminum is used as the target material, the purity of the reactive sputtering zinc oxide doped aluminum target material is 99.9%, the preparation temperature is 250° C., and the preparation time is 70 minutes to obtain a flexible stainless steel substrate / second AZO transparent conductive film.

[0041] 2), using a magnetron sputtering reaction chamb...

Embodiment 3

[0046] 1), the flexible stainless steel substrate is ultrasonically cleaned with ethanol and deionized water in sequence, the time of ultrasonic cleaning with ethanol is 5 minutes, the time of ultrasonic cleaning with deionized water is 5 minutes, blown dry with nitrogen gas, and sent to the magnetron sputtering reaction chamber. 1.0×10 -3 Under the condition of Pa vacuum, AZO transparent conductive film is deposited and prepared on the flexible stainless steel; the process parameter conditions are: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 10:1, zinc oxide doped Doped aluminum is used as the target material, the purity of the reactive sputtering zinc oxide-doped aluminum target material is 99.9%, the preparation temperature is 300° C., and the preparation time is 80 minutes to obtain a flexible stainless steel substrate / second AZO transparent conductive film.

[0047] 2), using a magnetron sputtering reaction chamber to ...

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Abstract

The invention relates to an n-VO2 / p-NiO-based heterogeneous structure and a preparation method thereof. The n-VO2 / p-NiO-based heterogeneous structure comprises a TiN film, a first AZO transparent conductive film, a VO2 film, a p-NiO film, a second AZO transparent conductive film and a flexible stainless steel substrate which are sequentially distributed from top to bottom, wherein the p-NiO film is a buffer layer, the TiN film is a protective layer, and the first AZO transparent conductive film and the second AZO transparent conductive film both serve as a conductive electrode and a slowing layer. With the preparation method adopted, the n-VO2 / P-NiO heterostructure can be combined with a flexible stainless steel material, a flexible high-power device can be prepared; the device has a bright application prospect in high-power photoelectric switches, high-power and low-cost optical storage devices, and the like; and the device can be low in power and long in service life.

Description

technical field [0001] The invention belongs to the technical field of manufacture of reversible semiconductor to metal (SMT) primary transition coating, in particular to a n-VO based 2 / p-NiO heterostructure and preparation method. Background technique [0002] Vanadium dioxide (VO 2 ) at a critical temperature (Tc) of 341 K for a temperature-driven reversible semiconductor-to-metal (SMT) first-order transition accompanied by a change in crystal symmetry. At temperatures below Tc, VO 2 Semiconductor state in the monoclinic phase (P21 / c), where the energy gap of the V atom pair is 0.6 eV. At temperatures above Tc, VO 2 In the tetragonal (P42 / mnm) metallic state, where the overlap between the Fermi level and the V3d band eliminates the aforementioned band gap. Such transitions in crystal symmetry and electronic band structure are often accompanied by abrupt changes in their resistivity and near-infrared transmission. Therefore, VO 2 It has long been considered as a key...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/267H01L21/02
CPCH01L21/02425H01L21/02483H01L21/02565H01L21/02631H01L29/267
Inventor 张东赵琰李昱材王健宋世巍王刚丁艳波王晗刘莉莹
Owner SHENYANG INST OF ENG
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