Preparation method of novel p-based compound Ag6Ge10P12 material with high thermoelectric performance

Abstract

The invention belongs to the technical field of manufacturing workpieces or products from metal powder, and discloses a novel P-based compound Ag 6 Ge 10 P 12 Preparation method of high thermoelectric performance material, doped polycrystalline Ag 6 Ge 10 P 12 It has very superior thermoelectric performance, doping about 3% Ga can improve the overall performance by 2-3 times, and the time required for material growth is comparable to other traditional polycrystalline thermoelectric materials (about one week). Compared with many phosphorus-based thermoelectric materials, the highest PF (determining the electrical properties of the material) and the highest zT (determining the thermoelectric performance) or the average zT (determining the conversion efficiency) are currently the best. The present invention successfully prepares Ag 6 Ge 10 P 12 Polycrystalline bulk material; solves the problem of excessive vapor pressure generated by phosphorus during the growth process, and the explosion of the quartz tube due to excessive vapor pressure; the effective doping method of Ga element improves the thermoelectric performance of the material.

Description

technical field [0001] The invention belongs to the technical field of manufacturing workpieces or products from metal powder, and in particular relates to a novel P-based compound Ag 6 Ge 10 P 12 Preparation method of high thermoelectric performance material. Background technique [0002] At present, the existing technologies commonly used in the industry are as follows: Recover waste heat energy to alleviate the energy crisis; heat energy can be directly converted into electric energy, can be refrigerated, and has no noise, no vibration, and no pollution; it is a kind of new energy technology. Most of the existing thermoelectric materials are binary or ternary semiconductor compounds composed of anions and cations. Through statistical research, it is found that most of the anions that make up thermoelectric materials are very rare heavy elements in the earth's crust, such as Te, Se or Sb. These heavy elements are key to achieving the lower thermal conductivity of rela...

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Problems solved by technology

[0004] 1. P element is very volatile during the high-temperature synthesis process, resulting in impurity of the compound and the explosion of the quartz tube wall due to the high vapor pressure of P;

[0005] 2. Due to the high thermal conductivity or low power factor of existing P-based thermoelectric materials, the final thermoelectric performance is too low

[0008] 2. The P-based materials that have been reported so far, due to the lack of excellent crystal structure (affecting the energy band structure and phonon dispersion relationship), resulting in low power factor or low lattice thermal conductivity, and excellent thermoelectric properties require materials Simultaneously meet high power factor and intrinsic low lattice thermal conductivity

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