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Diffusion method for high-concentration phosphorosilicate glass and high square resistance

A technology of phospho-silicate glass and diffusion method, which is applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., to achieve the effects of increasing the flow rate of the source, reducing the time of the source, and high square resistance

Active Publication Date: 2018-08-10
TONGWEI SOLAR ENERGY CHENGDU CO LID
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the current monocrystalline silicon battery diffusion process cannot greatly improve the battery conversion efficiency under the superimposed SE technology, and to provide a high-concentration phosphosilicate glass that can greatly improve the battery efficiency and high square resistance diffusion method

Method used

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  • Diffusion method for high-concentration phosphorosilicate glass and high square resistance

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Embodiment 1

[0040] A diffusion method with high concentration of phosphosilicate glass and high square resistance, such as figure 1 As shown in steps 6-12, specifically:

[0041] For the first pre-deposition, the quartz tube diffusion furnace is stabilized at the preset temperature and the preset nitrogen flow rate, and nitrogen and oxygen carrying phosphorus oxychloride are introduced. The nitrogen flow rate carrying phosphorus oxychloride is 860 sccm, and the oxygen flow rate is 680 sccm. The duration is 2min, the preset nitrogen flow rate is 500sccm, and the preset temperature in the furnace is 783-787°C;

[0042]After the first temperature rise and the first pre-deposition are completed, the nitrogen and oxygen carrying phosphorus oxychloride are stopped in the quartz tube diffusion furnace, and the nitrogen flow is stabilized at the preset nitrogen flow rate, and the furnace tube is heated to the predetermined temperature for 5 minutes. The preset temperature in the furnace is 803-8...

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Abstract

The invention discloses a diffusion method for high-concentration phosphorosilicate glass and high square resistance. The method comprises the steps of 1, first pre-deposition; 2, first heating; 3, second pre-deposition; 4, second heating; 5, propelling; 6, cooling; and 7, third pre-deposition. In the invention, a method of multi-step diffusion is adopted, the source introduction time is reduced,the source introduction flow is increased, fast heating and propelling improve the conventional diffusion method, and high square resistance with excellent uniformity is realized while obtaining PSG (Phosphorosilicate Glass) with high impurity concentration, so that the follow-up process is ensured to realize a more ideal SE structure, and finally the battery conversion efficiency is improved to the maximum extent. In addition, the diffusion method is extremely high in compatibility with the conventional production line, does not need to improve equipment or add new equipment and is excellentin practicability.

Description

technical field [0001] The invention belongs to the technical field of production and manufacture of crystalline silicon solar cells, and in particular relates to a diffusion method of high-concentration phosphosilicate glass and high square resistance. Background technique [0002] The square resistance value and the surface PSG impurity concentration obtained by the conventional monocrystalline silicon cell diffusion process, under the superimposed SE technology, that is, the selective emitter, the cell conversion efficiency is not significantly improved, and the advantages of the SE structure cannot be shown. However, under the premise of high square resistance and high surface concentration impurity PSG, the advantages of SE structure can be clearly displayed, and the final conversion efficiency of the battery can be improved to achieve the purpose of improving efficiency. [0003] Under the premise of matching the conventional monocrystalline silicon cell diffusion proc...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/223
CPCH01L21/223H01L31/18Y02P70/50
Inventor 张鹏
Owner TONGWEI SOLAR ENERGY CHENGDU CO LID
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