Zinc oxide semiconductor material, preparation method thereof, semiconductor device and air conditioner

A semiconductor, zinc oxide technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor stability, difficult p-type materials, and poor crystal quality, and achieve the effect of good stability

Active Publication Date: 2018-08-03
美垦半导体技术有限公司
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  • Abstract
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Problems solved by technology

However, there are still difficulties in realizing stable, high-carrier-concentration p-type materials
For example, using nitrogen doping can get better p-type conductivity, but the stability is very poor. Even if p-type conductivity is obtained, nitrogen will become nitrogen loss after a period of use, making the semiconductor return to n-type; The doping method will introduce large lattice distortion, resulting in poor crystal quality

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  • Zinc oxide semiconductor material, preparation method thereof, semiconductor device and air conditioner

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Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the position in a certain posture (as shown in the accompanying drawing). If the specific posture changes, the directional indication will also change accordingly.

[0032] In addition, if there are descriptions involving "first", "second" and ...

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Abstract

The invention discloses a zinc oxide semiconductor material, a preparation method thereof, a semiconductor device and an air conditioner. The preparation method of the zinc oxide semiconductor material comprises the following steps: first preparing a zinc oxide buffer layer; secondly, growing a zinc film on the zinc oxide buffer layer, and adding a first element and a second element to the zinc oxide film, wherein the ionic radius of the first element is less than the radius of a zinc ion, and the ionic radius of the second element is greater than the radius of an oxygen ion; and finally, increasing the temperature of the zinc oxide film and then annealing the zinc oxide film. The method adds two different types of elements to the zinc oxide film so that the first element and the oxygen ions are combined to form a new lattice and introduce pressure stress, and the second element and the zinc ion are combined to form a new lattice and introduce tensile stress. Macroscopically, the tensile stress and the pressure stress inside the zinc oxide film cancel out each other to form a stable P-type doped zinc oxide semiconductor material.

Description

technical field [0001] The invention relates to the field of air conditioners, in particular to a zinc oxide semiconductor material and a preparation method thereof, a semiconductor device and an air conditioner. Background technique [0002] Components made of wide bandgap zinc oxide semiconductor materials have the advantages of high breakdown voltage, strong ability to maintain electric field, low electronic noise, and high power withstand. The key to the application of zinc oxide semiconductor materials is to achieve stable p-type doping. Due to the large number of defects and unintentional doping in the zinc oxide semiconductor material itself, the background carrier concentration of the material is high, and it is easy to form n-type zinc oxide. It is difficult to realize p-type zinc oxide. In recent years, theoretical calculations and experimental results have shown that both group V elements and group I elements can be used as acceptor doping for p-type zinc oxide, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/227
CPCH01L21/02403H01L21/02496H01L21/02664H01L29/227
Inventor 苏宇泉冯宇翔毕晓猛
Owner 美垦半导体技术有限公司
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