Method for continuous VGF crystal growth through rotation after horizontal injection synthesis

Abstract

The invention provides a method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, after the direct horizontal injection synthesis of a volatile element and a pure metal element, and the slow rotation of a furnace is controlled further by arotation mechanism, such that the high-purity compound semiconductor crystal is prepared through the continuous VGF crystal growth using the rotation after horizontal injection synthesis, and the condition that the seed crystal is molten by the pure metal before the VGF crystal growth can be avoided; and the method has characteristics of simple steps, simple equipment structure, easy operation and easy control, and is suitable for the industrial production of semiconductor crystals.

Description

technical field [0001] The present invention relates to a device and method for synthesis and growth of semiconductor crystals, in particular to a method for horizontal injection synthesis and continuous rotation of VGF crystal growth, especially suitable for semiconductor crystal materials synthesized with volatile elements such as indium phosphide and gallium phosphide VGF crystal growth. Background technique [0002] Compound semiconductors are widely used in the electronics industry and are important compound semiconductor materials. For example, InP, GaP, GaAs, etc. Since the element composition contains volatile elements, the synthesis methods include horizontal diffusion synthesis and injection synthesis. The crystal growth methods include LEC (Liquid Encapsulated Czochralski: Liquid Encapsulated Czochralski) method, VGF (Vertical gradient freezing: Vertical Gradient Freezing) method, etc., because the LEC method requires high equipment costs, large crystal stress, ...

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Problems solved by technology

[0004] In order to solve the technical problems that polycrystalline material needs to be put into the VGF crystal growth before synthesis after injection method synthesis, the growth process is tedious and complicated, and the industrialization is difficult, the present invention provides a method for rotating continuous VGF crystal growth after horizontal injection synthesis, using After the direct horizontal injection of volatile elements and pure metal elements, the furnace body is further controlled to rotate slowly by means of a rotating mechanism to realize continuous VGF crystal growth after crystal synthesis to prepare high-purity compound semiconductor crystals, avoiding the loss of pure metals before VGF growth. The seed crystal is melted away, the method has simple steps, simple equipment structure, easy operation and control, and is conducive to the industrial production of semiconductor crystals

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