Back face passivated laser slotted solar cell and manufacturing method thereof

A technology of backside passivation and laser grooving, which is applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of large stress on crystalline silicon wafers, limited collection dimensions, and large active area, so as to reduce debris and enhance collection ability, the effect of reducing the conduction resistance

Pending Publication Date: 2018-07-27
TONGWEI SOLAR ENERGY (CHENGDU) CO LID
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is: in order to solve the problem that the existing back passivation solar cell adopts a linear or dotted line groove structure, the photogenerated carriers can only flow and collect between two lines parallel to each other, the collection dimension is limited, and The single penetrating linear laser slotting structure has a larger action area on the crystalline silicon wafer, which causes the crystalline silicon wafer to bear greater stress, and the battery sheet is easily fragmented when the assembly is welded. The invention provides a rear passivation laser opening Grooved solar cell and method of making the same

Method used

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  • Back face passivated laser slotted solar cell and manufacturing method thereof
  • Back face passivated laser slotted solar cell and manufacturing method thereof
  • Back face passivated laser slotted solar cell and manufacturing method thereof

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Embodiment 1

[0052] Such as figure 1 As shown, the present embodiment provides a back passivation laser grooved solar cell, comprising a solar grade crystalline silicon wafer provided with a back passivation film 3, on which a number of parallel arrays are evenly arranged on the back passivation film 3 Spacer lines 1 and several vertically arranged spacer lines 2 vertically intersecting with several parallel spacer lines 1, in this embodiment, a laser spot with a certain wavelength and a suitable size is used for slotting on the passivation film 3 on the back of the crystalline silicon wafer. The back passivation film 3 includes but not limited to aluminum oxide, silicon oxide, silicon dioxide, silicon oxynitride, silicon carbide and stacks of different combinations thereof. The thickness of the stacked film is 150nm. Square spot, the laser spot size on the laminated film is 35um, the Ag / Ag-Al electrode 4 and the epitaxial 0.8mm area on the back of the battery are not laser grooved, which ...

Embodiment 2

[0077] Such as figure 2 As shown, the present embodiment provides a back passivation laser grooved solar cell, comprising a solar grade crystalline silicon wafer provided with a back passivation film 3, on which a number of parallel arrays are evenly arranged on the back passivation film 3 Spacer lines 1 and several vertically arranged spacer lines 2 vertically intersecting with several parallel spacer lines 1, in this embodiment, a laser spot with a certain wavelength and a suitable size is used for slotting on the passivation film on the back of the crystalline silicon wafer. The back passivation film includes but not limited to aluminum oxide, silicon oxide, silicon dioxide, silicon oxynitride, silicon carbide and their different combinations. The thickness of the laminated film is 183nm. The laser spot adopts a square spot with a wavelength of 1064nm , the laser spot size on the laminated film is 45um, no laser slots are used on the back of the battery to lead out the Ag / ...

Embodiment 3

[0101] Such as image 3 As shown, the present embodiment provides a back passivation laser grooved solar cell, comprising a solar grade crystalline silicon wafer provided with a back passivation film 3, on which a number of parallel arrays are evenly arranged on the back passivation film 3 Spacer lines 1 and several vertically arranged spacer lines 2 vertically intersecting with several parallel spacer lines 1, in this embodiment, a laser spot with a certain wavelength and a suitable size is used for slotting on the passivation film on the back of the crystalline silicon wafer. The rear passivation film includes but is not limited to aluminum oxide, silicon oxide, silicon dioxide, silicon oxynitride, silicon carbide and their different combinations. The thickness of the laminated film is 150nm. Spot, the laser spot size on the laminated film is 60um, no laser slots are used on the back of the battery to lead out the Ag / Ag-Al electrode 4 and the area of ​​the epitaxial 0.2mm, w...

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Abstract

The invention discloses a back face passivated laser slotted solar cell and a manufacturing method thereof, and relates to the technical field of solar cell manufacturing. The solar cell comprises a solar grade crystal silicon wafer which is provided with a back passivation film, a plurality of parallel-arranged septal lines and vertically arranged septal lines perpendicularly intersected with theparallel-arranged septal lines are uniformly arranged on the back passivation film, the parallel-arranged septal lines include parallel solid line segments slotted by a laser and non-slotted paralleldashed line segments, and the vertically arranged septal lines include vertical solid line segments slotted by the laser and non-slotted vertical dashed line segments. According to the solar cell, the parallel-arranged septal lines and the vertically arranged septal lines are combined to reduce the action area of the laser on the crystal silicon wafer, reduce the loss of the back passivation filmon a surface layer and achieve photo-generated carrier collection in parallel and vertical directions to improve battery efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, and more specifically relates to a solar cell with back passivation laser grooved and a manufacturing method thereof. Background technique [0002] Back passivated solar cell is a new generation of solar cell with high efficiency and new structure. It is compatible with the conventional Al-BSF cell production process. By introducing the back passivation film and laser grooving process, the photoelectric conversion efficiency of the cell can be significantly improved. However, the passivation deposited on the back Although the passivation film exhibits excellent surface passivation and bulk passivation characteristics, the passivation layer has a high dielectric constant, stable chemical properties and corrosion resistance, and laser grooving is often required to peel off the passivation film. Leaking out the silicon substrate, and then printing conductive aluminum paste, after hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/048H01L31/18
CPCH01L31/0216H01L31/048Y02E10/50Y02P70/50
Inventor 王岚杨蕾吴俊旻常青张冠纶
Owner TONGWEI SOLAR ENERGY (CHENGDU) CO LID
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