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Performance-adjustable high-stability resistive random access memory

A technology of resistive memory and stability, applied in electrical components and other directions, can solve the problems of unstable performance of resistive memory, misreading, miswriting, affecting data reliability, etc., to achieve easy operation, improve stability, and preparation process. simple effect

Pending Publication Date: 2018-07-06
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the unstable performance of the existing resistive memory, it directly affects the resistance value and the erasing voltage of its high and low resistance states, resulting in misreading and miswriting, which affects the reliability of data, and leads to the practical application of resistive memory.

Method used

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  • Performance-adjustable high-stability resistive random access memory
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  • Performance-adjustable high-stability resistive random access memory

Examples

Experimental program
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Effect test

Embodiment 1

[0031] In the resistive variable memory prepared in this embodiment, the conductive oxide film is an ITO film with a thickness of 60 nm, and is placed between the bottom electrode and the resistive variable layer.

[0032] The specific preparation process is as figure 2 Shown:

[0033] First, an Al conductive film is deposited on the glass substrate 4, and the Al conductive film is etched to form a bottom electrode 3, such as figure 2 as shown in (a);

[0034] Then, deposit a thickness of 60nm ITO thin film on the bottom electrode 3 to form a performance control layer 5, such as figure 2 as shown in (b);

[0035] Next, deposit Al with a thickness of 10 nm on the performance regulation layer 5 2 o 3 film to form a resistive switch layer 2, such as figure 2 as shown in (c);

[0036] Finally, an Al conductive film is deposited on the resistive switch layer 2 to form a top electrode 1, such as figure 2 As shown in (d), the RRAM is obtained.

[0037] The resistive mem...

Embodiment 2

[0039] The process and parameters for preparing the resistive memory in this example are the same as those in Example 1, the difference is that in the resistive memory prepared in this example, an ITO film with a thickness of 60 nm is placed between the top electrode and the resistive layer. like Figure 4 shown.

[0040] The resistive memory prepared in this embodiment is tested, and the test results are: the activation voltage of the resistive memory is about 4V, the variation range of the set voltage is 0.2V, and the resistance ratio of the resistive memory is about 600-700.

Embodiment 3

[0042] The process and parameters for preparing the resistive memory in this example are the same as those in Example 1. The difference is that in the resistive memory prepared in this example, an ITO film with a thickness of 30 nm is placed between the bottom electrode and the resistive layer at the same time. and between the top electrode and the resistive layer, such as Figure 5 shown.

[0043] The resistive memory prepared in this embodiment is tested, and the test results are: the activation voltage of the resistive memory is about 4V, the variation range of the set voltage is 0.2V, and the resistance ratio of the resistive memory is about 600-700.

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Abstract

The invention discloses a performance-adjustable high-stability resistive random access memory which comprises a substrate, a bottom electrode, a resistive random access layer and a top electrode in sequence from top to bottom. The memory is characterized by further comprising conductive oxide thin films, the thin films are arranged between the bottom electrode and the resistive random access layer or between the top electrode and the resistive random access layer, or the thin films are arranged between the bottom electrode and the resistive random access layer and between the top electrode and the resistive random access layer, and the adjustment of the activating voltage-resistance ratio of the resistive random access memory is realized by changing the thickness of the conductive oxide thin films and the content of oxygen vacancy. By means of the resistive random access memory, the stability of the resistive random access memory is improved, and the resistive random access performance of the resistive random access memory can be adjusted.

Description

technical field [0001] The invention belongs to the field of resistive memory devices, and in particular relates to a resistive memory with adjustable performance and high stability. Background technique [0002] Resistive Random Access Memory (RRAM) is a new type of non-volatile memory that uses the switching characteristics of certain thin film materials under the action of an external electric field to realize data storage. The structure of the RRAM is generally a simple three-layer structure, that is, a layer of insulating or semiconducting dielectric material is sandwiched between two layers of metal. It has the advantages of simple structure, small cell size, fast erasing and writing speed, high storage density, multiple times of repeated erasing and writing, multi-value storage, etc., and the preparation process is well compatible with existing semiconductor processes. It is considered to be a powerful force for the next generation of mainstream memory. competitor. ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/8836H10N70/011
Inventor 王营叶志刘妮刘旸
Owner ZHEJIANG UNIV
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