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Ga-doped inp quantum dots with core-shell structure and preparation method thereof

A quantum dot and shell structure technology is applied in the field of Ga-doped InP quantum dots and their preparation, which can solve the problems of increased defects, large half-peak width, defects between core-shell interfaces, etc., and achieves the effect of simple operation.

Active Publication Date: 2021-10-22
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

And as the quantum dot particle size increases, its defects increase, that is, the larger the fluorescence emission peak, the larger the half-peak width
In addition, InP quantum dots with a shell coating, such as InP / ZnS, have a lattice mismatch rate of about 8% between the crystal core and the bulk material of the shell layer. Pure InP / ZnS core-shell quantum dots, Defects at the core-shell interface are hard to avoid

Method used

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  • Ga-doped inp quantum dots with core-shell structure and preparation method thereof
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  • Ga-doped inp quantum dots with core-shell structure and preparation method thereof

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[0033] In order to obtain quantum dots with the above structure, the present invention also discloses a method for preparing Ga-doped InP quantum dots with a core-shell structure, comprising the following steps: 1) adding an indium precursor to a compound containing the first ligand In an organic solvent, heat to 180-260 ° C, add PH 3 , to obtain a mixed system with InP nanocrystalline nuclei; 2) adding the indium precursor and the gallium precursor to the organic solvent containing the second ligand, heating to dissolve, and obtaining a mixed precursor solution of indium and gallium; 3) adding Mix precursor solution and pH in step 2) 3 Add to the mixing system in step 1) in turn to form a Ga-doped InGaP nanocrystalline intermediate layer; 4) Add the precursor substances required for the shell layer of the synthetic quantum dot to obtain a Ga-doped InP quantum dot with a core-shell structure point; the composition of the Ga-doped InGaP nanocrystalline interlayer is In x Ga ...

Embodiment 1

[0059] Preparation of Ga-doped InP quantum dot samples with core-shell structure 1

[0060] (1) Preparation of indium oleate (In-OA): add indium acetate, oleic acid and 1-octadecene into a three-necked flask, heat until dissolved, and obtain a clear and transparent solution of In-OA with a concentration of 0.1M;

[0061] (2) Preparation of gallium oleate (Ga-OA): add gallium chloride, oleic acid and 1-octadecene into a three-necked flask, heat until dissolved, and obtain a clear and transparent solution of Ga-OA with a concentration of 0.1M;

[0062] (3) Preparation of zinc oleate (Zn-OA): add zinc acetate, oleic acid and 1-octadecene into a three-necked flask, heat until dissolved, and obtain a clear and transparent solution of Zn-OA with a concentration of 0.5M;

[0063] (4) Preparation of indium oleate and gallium oleate mixture (In-OA+Ga-OA): Mix the prepared In-OA and Ga-OA in (1) and (2) in equal proportions, heat and stir until well mixed;

[0064] (5) Preparation of ...

Embodiment 2

[0072] Fabrication of Ga-doped InP quantum dot samples with core-shell structure 3

[0073] Add In(OAc) to the three-neck flask 3 (300mg), Zn(OAc) 2 (100mg), myristic acid (700mg) and 1-octadecene (10mL), heated to dissolve, and passed into N 2 , keep the reaction for 120min to obtain a clear and transparent solution. Continue to heat to 230°C, pass a certain amount of pH 3 gas, reacted for 30min, added dropwise 1mL of the In-OA+Ga-OA solution obtained in step (4) of Example 1 to the solution, reacted for 30min, and then slowly introduced a certain amount of pH 3 Gas, react for 30min. Next, 2 mL of the In-OA+Ga-OA solution obtained in step (4) in Example 1 was added dropwise to the solution for the second time, reacted for 30 minutes, and then a certain amount of pH was slowly introduced into the solution. 3 Gas, react for 30min. For the third time, 3 mL of the In-OA+Ga-OA solution obtained in step (4) in Example 1 was added dropwise to the solution, reacted for 30 min, ...

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Abstract

The invention provides a Ga-doped InP quantum dot with a core-shell structure and a preparation method thereof. The quantum dots include an InP nanocrystalline core, a Ga-doped InGaP nanocrystalline intermediate layer and a shell layer, and the Ga-doped InGaP nanocrystalline intermediate layer is composed of In x Ga y P, the shell is ZnSe z S 1‑z , where 1≤x / y≤9, 0≤z≤1. The fluorescence emission wavelength of the quantum dots is continuously adjustable within 610-780nm, and the particle size is uniform, and the half-maximum width of the emission peak is obviously smaller than that of pure InP quantum dots of the same wavelength. The present invention uses pH 3 As a phosphorus source, by forming a Ga-doped InGaP nanocrystalline intermediate layer between the nanocrystalline core and the shell layer, it alleviates the defects caused by the lattice mismatch of InP quantum dots, and has the characteristics of low cost, environmental protection, and simple operation , can be widely used in lighting, display and other fields.

Description

technical field [0001] The invention relates to the technical field of semiconductor nanomaterial preparation, in particular to a Ga-doped InP quantum dot with a core-shell structure and a preparation method thereof. Background technique [0002] Quantum dots, a type of inorganic semiconductor light-emitting nanocrystals with obvious quantum size effect and unique optical properties, have attracted widespread attention for their potential applications in lighting, display, solar energy, and biomarkers. In recent years, the development and application of quantum dots have mainly focused on the cadmium-containing quantum dot system, which is mainly due to the high quantum yield and stable optical properties of this type of quantum dots. As we all know, cadmium is a highly toxic heavy metal, which can cause great harm once ingested by the human body. Therefore, there are very strict regulations on the use of cadmium-containing materials at home and abroad, which undoubtedly li...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02
CPCC09K11/02C09K11/883
Inventor 张卫张超王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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