Growing method of vertical structure power device epitaxial layer and power device

A power device and vertical structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor epitaxial layer quality, substrate surface unevenness, and poor epitaxial layer surface flatness, and achieve steps Simple, smooth, good quality effect

Inactive Publication Date: 2015-04-22
JIANGSU CORENERGY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, when growing an epitaxial layer on a substrate, the following two problems will occur: 1) The quality of the epitaxial layer grown on a flat substrate surface is poor; 2) The growth of the epitaxial layer is more conducive to the growth of the epitaxial layer on the rough substrate surface, and the quality of the epitaxial layer grown on it is better than that grown on the flat substrate surface. However, the substrate is peeled off in the later process When , the surface planarity of the peeled epitaxial layer is poor due to the unevenness of the substrate surface

Method used

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  • Growing method of vertical structure power device epitaxial layer and power device
  • Growing method of vertical structure power device epitaxial layer and power device
  • Growing method of vertical structure power device epitaxial layer and power device

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Embodiment 1

[0023] A method for growing an epitaxial layer of a vertical structure power device described in this embodiment mainly includes the following steps:

[0024] 1) see figure 1 , figure 2 As shown, a gallium nitride epitaxial transition layer 2 is grown on a smooth sapphire substrate 1;

[0025] 2) see image 3 As shown, a dry etching method is used to perform partial etching on the surface of the GaN epitaxial transition layer 2 to form a patterned GaN epitaxial transition layer 2, and the patterned GaN epitaxial transition layer 2 has a certain rough surface;

[0026] 3) see Figure 4 As shown, a target epitaxial layer 3 is grown on the rough surface of the etched GaN epitaxial transition layer 2, where the target epitaxial layer 3 is a GaN epitaxial layer.

Embodiment 2

[0028] The method for growing an epitaxial layer of a vertical power device described in this embodiment mainly includes the following steps:

[0029] 1) see figure 1 , figure 2 As shown, a multi-layer epitaxial transition layer 2 is grown on a smooth silicon substrate 1;

[0030] 2) see image 3 As shown, the surface of all epitaxial transition layers 2 is partially etched by dry etching to form an epitaxial transition layer 2 with a rough surface;

[0031] 3) see Figure 4 As shown, a target epitaxial layer 3 is grown on the rough surface of the epitaxial transition layer 2 after etching, that is, a gallium nitride epitaxial layer.

[0032] Here, the materials of the multiple epitaxial transition layers 2 can be the same material or different materials, and the material of each epitaxial transition layer 2 can be gallium nitride, aluminum nitride or aluminum gallium nitride.

[0033] Here, the substrate 1 can also be a silicon carbide substrate or a sapph...

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Abstract

The invention discloses a growing method of a vertical structure power device epitaxial layer and a power device. The growing method mainly comprises the steps that (1) one or more epitaxial transition layers grow on a smooth substrate; (2) the surfaces of the epitaxial transition layers are subjected to partial etching treatment, so that epitaxial transition layers with rough faces are formed; and (3) after treatment in the step (2), a target epitaxial layer grows on the rough faces of the epitaxial transition layers. According to the growing method, the steps are simple, implementation is easy, the epitaxial layers growing through the method are good in quality, after the substrate is separated in the following step, the epitaxial layers can be kept in good smoothness, and following processes can be well achieved.

Description

technical field [0001] The invention relates to a method for growing an epitaxial layer of a vertical structure power device and the power device thereof. Background technique [0002] Epitaxial growth is to re-grow a single crystal layer with certain requirements and the same crystal direction as the substrate along its original crystal direction on the single crystal substrate (substrate). [0003] At present, when growing an epitaxial layer on a substrate, the following two problems will occur: 1) The quality of the epitaxial layer grown on a flat substrate surface is poor; 2) The rough substrate surface is more conducive to the growth of the epitaxial layer. growth, and the quality of the epitaxial layer grown on it is better than that grown on a flat substrate surface. The surface smoothness of the layer is poor. Therefore, there is an urgent need for a method so that not only the quality of the epitaxial layer grown on the substrate is good, but also the flatness o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/683H01L29/06
CPCH01L29/06H01L21/02
Inventor 苗操伊迪亚·乔德瑞杨秀程朱廷刚艾俊王科
Owner JIANGSU CORENERGY SEMICON CO LTD
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