Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-power-supply-rejection-ratio reference circuit based on sub-threshold-region MOS partial pressure

A high power supply rejection ratio, reference circuit technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of large layout area, affecting the accuracy of output reference, high circuit power consumption, etc., to reduce the temperature coefficient, The effect of reducing the layout area and improving the power supply rejection ratio

Inactive Publication Date: 2018-06-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The traditional bandgap reference circuit has a large layout area due to the use of triodes and large resistors, although the large resistors can reduce power consumption to a certain extent; and to achieve a good power supply rejection ratio, it is necessary to use the op amp A1 to clamp bit, resulting in relatively high overall power consumption of the circuit, and the offset of the operational amplifier A1 will greatly affect the accuracy of the output reference

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power-supply-rejection-ratio reference circuit based on sub-threshold-region MOS partial pressure
  • High-power-supply-rejection-ratio reference circuit based on sub-threshold-region MOS partial pressure
  • High-power-supply-rejection-ratio reference circuit based on sub-threshold-region MOS partial pressure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0033] A high power supply rejection ratio reference circuit based on sub-threshold region MOS voltage division proposed by the present invention includes a startup circuit and a reference core circuit, and some embodiments also include an auxiliary operational amplifier circuit and a pre-adjustment circuit. The MOS transistors in the present invention are all Works in the subthreshold zone. The purpose of starting the circuit is to make the reference core circuit get rid of the metastable state of zero potential when it is powered on, so as to ensure that the reference circuit can work normally; at the same time, it is turned off after the reference circuit works normally. The reference core circuit completes the superposition of positive and negative temperature coefficient voltages to generate and output a stable reference voltage Vref. T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-power-supply-rejection-ratio reference circuit based on sub-threshold-region MOS partial pressure, and belongs to the technical field of electronic circuits. The high-power-supply-rejection-ratio reference circuit comprises a starting circuit and a reference core circuit, wherein the reference core circuit is used for generating positive-temperature-coefficient voltage and negative-temperature-coefficient voltage, and the positive-temperature-coefficient voltage and the negative-temperature-coefficient voltage are superposed to form reference voltage; when the starting circuit is powered on, the reference core circuit breaks away from zero potential, and the reference core circuit is closed after the reference circuit normally works. In some embodiments, thehigh-power-supply-rejection-ratio reference circuit also comprises an auxiliary operational-amplifier circuit and a pre-adjusting circuit, the auxiliary operational-amplifier circuit adopts a single-tube simple operational-amplifier mode, and a negative feedback loop is formed through the auxiliary operational-amplifier circuit and the reference core circuit to increase the power-supply rejectionratio of the circuit; the pre-adjusting circuit adopts a super source-follower structure to reduce the earth impedance of the power supply voltage of the core circuit so that the power-supply rejection ratio of the circuit can be further increased. By means of the high-power-supply-rejection-ratio reference circuit based on the sub-threshold-region MOS partial pressure, the low power-supply voltage, ultralow power consumption, the low temperature coefficient and the high power-supply rejection ratio can be achieved.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to a high power supply rejection ratio reference circuit based on sub-threshold region MOS voltage division. Background technique [0002] In the field of analog integrated circuit or mixed signal design, the reference voltage source is a very important and commonly used module, usually used in linear regulators, power amplifiers, analog-to-digital converters, power converters, energy harvesters and other circuits, its The purpose is to provide a stable and reliable reference potential that does not vary with temperature and supply voltage for the system. A few days ago, with the continuous development of ICs, new requirements have been put forward for the supply voltage and power consumption of low reference sources, and traditional bandgap references can no longer meet these requirements well. [0003] Traditional bandgap reference circuits such as figure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 周泽坤石旺石跃李响袁东张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products