SD protection circuit for MIM capacitor

A technology of ESD protection and capacitance, applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuit devices, etc., can solve problems such as MIM capacitor breakdown

Inactive Publication Date: 2018-06-26
江苏海瑞达微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to solve the problem that the MIM capacitor connected in series to the ground on the electrostatic disc...

Method used

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  • SD protection circuit for MIM capacitor
  • SD protection circuit for MIM capacitor
  • SD protection circuit for MIM capacitor

Examples

Experimental program
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Embodiment Construction

[0023] figure 1 The equivalent circuit of the MIM capacitor connected in series on the ESD path is shown.

[0024] figure 2 The specific structure of the ESD protection circuit of the MIM capacitor of the present invention is shown. The ESD protection circuit is composed of N stacked or "series" MOSFET tubes, N is an integer not less than 2, and can be designed according to specific requirements. The G poles of the N MOSFETs are all grounded, and their D poles and S poles are connected in sequence. Taking N as 2 as an example, the S pole of the first MOSFET is connected to one end of the MIM capacitor, and the S pole of the second MOSFET is connected to the ground. The D pole is connected to the other end of the MIM capacitor, thereby being connected in parallel with the MIM capacitor.

[0025] image 3 A radio frequency switching device with an ESD protection circuit of the MIM capacitor of the present invention is shown.

[0026] The device includes a signal input termi...

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PUM

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Abstract

Provided in the invention is an ESD protection circuit for an MIM capacitor. The ESD protection circuit comprises N FETs that are connected in sequence of from D poles to S poles; G poles of the FETsare grounded; and the S pole of the first FET is connected to one end of an MIM capacitor and the D pole of the Nth FET is connected to the other end of the MIM capacitor, so that the ESD protection circuit formed by series connection of the N FETs is connected in parallel with the MIM capacitor needing protection. When the voltage, generated by electrostatic discharging, of the MIM capacitor is too large, the current flows through the ESD protection circuit to protect the MIM capacitor. In addition, the invention also provides a radio-frequency switching device with the ESD protection circuitof the MIM capacitor; and because the a radio-frequency switching device can withstand the high ESD voltage, so that the reliability is improved.

Description

technical field [0001] The invention belongs to the field of integrated circuit design, in particular to a MIM capacitance ESD protection circuit in radio frequency and microwave integrated circuits. Background technique [0002] Electrostatic discharge (ESD) issues are a difficult problem in integrated circuit design. There are different standard levels of ESD, and integrated circuit design generally requires 2kV protection capability under the HBM (human body) model. MIM capacitors (on-chip metal-insulator-metal capacitors) have the following limitations in use: MIM capacitors connected in series on the ESD path will reduce the ESD level of the entire chip. [0003] The breakdown voltage (BVcap) of the MIM capacitor is mostly in the range of 30-50V. The equivalent circuit of capacitors in series on the ESD path, such as figure 1 As shown, the electrostatic discharge path with MIM capacitors in series can withstand the maximum ESD voltage (Vesd) to satisfy the following ...

Claims

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Application Information

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IPC IPC(8): H02H9/04H03K17/08H03K17/687
CPCH02H9/046H03K17/08H03K17/687
Inventor 陆建华马杰战吉超
Owner 江苏海瑞达微电子科技有限公司
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