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Manufacturing method for target material assembly

A manufacturing method and component technology, applied in the direction of manufacturing tools, non-electric welding equipment, welding/welding/cutting items, etc., can solve the problems of low quality and performance of target components, improve quality and yield, increase welding combination rate, The effect of improving the yield rate

Inactive Publication Date: 2018-05-25
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the quality and performance of the target components made by the existing technology are low

Method used

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  • Manufacturing method for target material assembly
  • Manufacturing method for target material assembly
  • Manufacturing method for target material assembly

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] It can be seen from the background art that the quality and performance of target components made by the prior art are relatively low. Analyze the reasons for this:

[0034] At present, in the field of target sputtering, the method of diffusion welding is mainly used to bond the aluminum-containing target blank and the copper back plate, and keep it under a certain temperature and pressure for a period of time, so that the atoms between the contact surfaces can diffuse each other to achieve the desired effect. The welding combination of the aluminum-containing target blank and the copper back plate forms the target assembly.

[0035] However, the diffusion performance between the aluminum material and the copper material is poor, so after the current diffusion welding method is used to form the target assembly, the welding tensile strength of the target assembly is low, and the aluminum-containing target blank and the copper back Plates are prone to desoldering, making...

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Abstract

The invention provides a manufacturing method for a target material assembly. The manufacturing method comprises the steps that a target billet, a connecting layer and a backboard are provided, the diffusion ability between materials of the target billet and the connecting layer is larger than the diffusion ability between materials of the target billet and the backboard, and the diffusion abilitybetween materials of the backboard and the connecting layer is larger than the diffusion ability between the materials of the target billet and the backboard; the target billet, the connecting layerand the backboard are assembled to form an initial assembly, and the connecting layer is located between the target billet and the backboard and makes contact with the target billet and the backboard;and the initial assembly is subjected to diffusion welding, and the target material assembly is formed. The connecting layer, the target billet and the backboard all have a good diffusion welding effect, therefore the manufacturing method can increase the welding bonding rate of the target billet and the backboard, the welding bonding rate reaches 99.9% or above accordingly, and the formed targetmaterial assembly meets using requirements of a semiconductor sputtering target material.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a target component. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of target sputtering. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. [0003] In the field of sputtering target manufacturing, the target assembly is composed of a target blank that meets the sputtering performance and a back plate that is combined with the target blank by welding. In the sputtering process, the working environment of the target assembly is relatively bad. For example: the ambient temperature of the target assembly is relatively high. In addition, one side of the target assembly is strongly cooled by cooling water, while the other side is in a high-vacuum environment, so huge formations are formed on the opposite si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/14B23K20/24B23K103/18
CPCB23K20/14B23K20/24
Inventor 姚力军潘杰相原俊夫王学泽曹欢欢
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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