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A wafer cleaning method

A wafer and cleaning liquid technology, applied in cleaning methods and tools, cleaning methods using liquids, cleaning methods using tools, etc., can solve problems such as wafer surface damage, achieve the effect of improving yield and avoiding damage

Active Publication Date: 2020-05-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, cleaning with a wafer cleaning brush is a cleaning method that has physical contact with the wafer, so this method may cause damage to the wafer surface

Method used

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  • A wafer cleaning method
  • A wafer cleaning method
  • A wafer cleaning method

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Embodiment 1

[0032] refer to figure 2 , figure 2 It is a schematic structural diagram of a wafer cleaning device in an exemplary embodiment. The wafer cleaning device 200 includes a cleaning chamber 201 , a loading platform 202 , a chemical liquid supply pipeline 203 and a megasonic generator 204 . When using the wafer cleaning device to clean the wafer, the wafer 205 is placed on the carrier table 202, the carrier table 202 rotates, the wafer 205 rotates together with the carrier table 202, and the cleaning liquid supply pipeline 203 supplies cleaning liquid to the surface of the wafer 205, The megasonic generator 204 is disposed above the surface of the wafer 205 , and the megasonic generator 204 swings above the surface of the wafer 205 .

[0033] Firstly, the wafer 205 to be cleaned is immersed in the cleaning solution of the cleaning device 200 , the cleaning solution is slightly alkaline deionized water. The wafer 205 is immersed in the cleaning solution of the cleaning device 2...

Embodiment 2

[0039] The wafer cleaning device in Embodiment 2 is the same as that in Embodiment 1, and will not be repeated here.

[0040] First, the wafer 205 to be cleaned is immersed in the cleaning solution of the cleaning device 200 , and the cleaning solution is weakly acidic deionized water. The wafer 205 is immersed in the cleaning solution of the cleaning device 200 , so the wafer 205 is in a high-pressure liquid phase environment. Preferably, the pH of the weakly acidic deionized water is 5-7, for example, hydrogenated deionized water (H2-DI) can be selected as the cleaning solution.

[0041]Then, the wafer 205 is rotated and the megasonic generator 204 is moved between the edge and the center of the wafer. At the same time, cleaning liquid can also be sprayed to the center of the wafer. The sprayed cleaning liquid is the same as the cleaning liquid in the cleaning device. The rotating speed range of the wafer 205 is: 2000-2500rpm / min. The above process conditions are for the...

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Abstract

The invention provides a wafer cleaning method. The method includes the following steps: immersing the wafer to be cleaned in a cleaning liquid of a cleaning device, where the cleaning liquid is weakly alkaline or weakly acidic deionized water; rotating the wafer; The wafer is moved and the megasonic generator is moved back and forth between the edge of the wafer and the center of the wafer. Using the method of the present invention, weakly alkaline or weakly acidic deionized water is used as the cleaning liquid, and the megasonic wave generator generates megawave pitting and the shearing force generated by the high-speed rotation of the wafer in the high-pressure liquid phase is removed. particles, and at the same time, by controlling the boundary potential to prevent particles from being adsorbed to the surface; this cleaning method has no physical contact with the wafer, which can avoid damage to the wafer and improve yield.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer cleaning method. Background technique [0002] The components and connections in the integrated circuit are quite fine, so if they are polluted by dust particles, metals, etc. during the manufacturing process, it is easy to cause damage to the circuit function, form an open circuit or short circuit, etc., resulting in the failure of the integrated circuit and affecting the geometric characteristics. Formation. Therefore, during the manufacturing process of semiconductor wafers of integrated circuits, multiple surface cleaning steps are required to remove impurities such as metal ions, atoms, organic substances, and dust particles attached to the surface. In large-scale integrated circuits (LSI), the removal of granular residues or large-size particles in front-opening-unified-pods (FOUPs) or sorting conveyors is A big challenge. [0003] Wafer cleaning brushes, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02B08B1/02B08B3/02B08B1/20
CPCH01L21/02052B08B3/022B08B1/20
Inventor 谷勋
Owner SEMICON MFG INT (SHANGHAI) CORP
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