Measurement method for three-dimensional memory channel conductivity

Abstract

The invention provides a measurement method for three-dimensional memory channel conductivity. Through combing a focusing ion beam machine and a nano-point needle table, the accuracy of the channel conductivity can be tested in advance before improving a peripheral circuit technique. The influence of poor problems of the peripheral control circuit on the three-dimensional memory channel conductivity in a traditional measurement method is solved, the test of the channel conductivity itself is realized, and the technical research and development cycle is shortened.

Description

technical field [0001] The invention relates to the field of testing the performance of semiconductor devices, in particular to a testing method for the continuity of a three-dimensional memory channel. Background technique [0002] Three-dimensional memory (3D NAND) is an emerging memory type that solves the limitations of 2D or planar NAND flash memory by stacking memory particles together. Instead of placing memory chips on a single side, the new 3D NAND technology stacks multiple layers of data storage cells vertically. Based on this technology, storage devices with a storage capacity several times higher than similar NAND technologies can be created. The technology enables higher storage capacity in a smaller footprint, resulting in significant cost savings, reduced power consumption, and dramatic performance gains for many consumer mobile devices and the most demanding enterprise deployments demand. [0003] In the design and development stage of a three-dimensional...

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Problems solved by technology

In evaluating the integrity of the channel, in addition to the slice analysis of the physical structure of the channel, it is also necessary to test the conductivity of the channel to obtain the electrical parameters of the channel. However, due to the immature technology and unstable process in the research and development stage There are various defects in the trial-produced chips, such as control gate circuit open circuit, short circuit, source leakage, etc., in order to obtain the conductivity parameters of the channel hole in advance and avoid the process of the peripheral circuit from improving the progress of the channel process. Therefore, it is necessary to design a new method to quickly realize the measurement of the electrical characteristics of the channel itself.

[0004] It can be seen that the traditional measurement of the channel electrical characteristics of a three-dimensional memory chip has the following problems: first, it needs to be carried out after the peripheral control circuit process is completed, so the time required for the improvement of the peripheral control circuit process will lead to the channel The impact of the continuity measurement schedule, resulting in an increase in time costs

Second, the condition of channel conduction is not only affected by the integrity of the channel itself, but also related to whether the peripheral circuit is controlled. If there are problems such as short circuit, open circuit or leakage in the peripheral circuit, it will directly affect the measurement of the electrical characteristics of the channel. accuracy

The instability of the 3D NAND process leads to the failure of the peripheral control circuit, which affects the measurement of the channel conductivity; and the improvement of the process of the peripheral circuit will also affect the channel process, so it is necessary to be able to complete the evaluation of the channel process at the same time to realize the channel Fast measurement of the electrical properties of the track itself

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