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Laminated HfO2-based resistive random access memory for improving current overcharging, and manufacturing method thereof

A technology of resistive variable memory and manufacturing method, which is applied in the field of microelectronics, can solve problems such as inability to reduce switching voltage, high switching voltage, large overshoot current, etc., achieves improvement of current overshoot phenomenon, improvement of device performance, and simple structure Effect

Inactive Publication Date: 2018-04-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

D.C.Gilmer and others improved the current overshoot by studying the resistive variable memory using the high-low k dielectric stack structure, but the experimental results showed that it could not reduce the switching voltage, but also made the switching voltage higher and the overshoot current larger

Method used

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  • Laminated HfO2-based resistive random access memory for improving current overcharging, and manufacturing method thereof
  • Laminated HfO2-based resistive random access memory for improving current overcharging, and manufacturing method thereof
  • Laminated HfO2-based resistive random access memory for improving current overcharging, and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1, making HfO x The oxygen-argon ratio of the oxygen supply layer is 15% and HfO y The resistive switch layer has an oxygen-argon ratio of 40% laminated HfO 2 Base RRAM.

[0032] Step 1, cleaning SiO2 2 substrate.

[0033] First clean the substrate silicon wafer with acetone ultrasonically for 3 minutes, and the ultrasonic intensity is 3.0;

[0034] Then ultrasonically clean the substrate silicon wafer with ethanol for 2 minutes, and the ultrasonic intensity is 3.0;

[0035] Then rinse the substrate silicon wafer with ultrapure water for 2 minutes, then take out the silicon wafer and dry it with nitrogen;

[0036] Finally, the surface of all substrate silicon wafers is inspected with a microscope to ensure that the surface is clean.

[0037] Step 2, depositing the bottom electrode.

[0038] Using PVD DC sputtering process, the cleaned SiO 2 Deposit a metal Pt bottom electrode with a thickness of 115nm on the silicon wafer:

[0039] PVD DC sputtering ...

Embodiment 2

[0072] Embodiment 2, making HfO x The oxygen-argon ratio of the oxygen supply layer is 18% and HfO y The resistive switch layer has an oxygen-argon ratio of 43% laminated HfO 2 Base RRAM.

[0073] Step 1, cleaning SiO2 2 substrate.

[0074] The specific implementation of this step is the same as step 1 of Embodiment 1.

[0075] Step 2, depositing the bottom electrode.

[0076] Using PVD DC sputtering at a vacuum of 5e -6 Torr, the sputtering power is 100W, the argon pressure is 4mTorr, the pre-sputtering time is 180s, and the sputtering time is 750s, the cleaned SiO 2 A metal Pt bottom electrode with a thickness of 120 nm is deposited on the silicon wafer.

[0077] Step 3, Deposit HfO x Support layer.

[0078] Using PVD reactive sputtering at a vacuum of 5e -6 Torr, the sputtering power is 100W, the pulse frequency is 100Hz, the pulse width is 2μs, the gas pressure is 4mTorr, the oxygen-argon ratio is 18%, and the sputtering time is 700s. 18% HfO with argon ratio x...

Embodiment 3

[0083] Embodiment 3, making HfO x The oxygen-argon ratio of the oxygen supply layer is 20% and HfO y Resistive layer with oxygen-argon ratio of 45% laminated HfO 2 Base RRAM.

[0084] Step 1, cleaning the Si wafer substrate.

[0085] The specific implementation of this step is the same as step 1 of Embodiment 1.

[0086] Step 2, depositing the bottom electrode.

[0087] Using PVD DC sputtering at a vacuum of 5e -6 Torr, the sputtering power is 100W, the argon pressure is 4mTorr, the pre-sputtering time is 180s, and the sputtering time is 780s, a layer of metal Pt substrate with a thickness of 125nm is deposited on the cleaned Si silicon wafer. electrode.

[0088] Step 3, Deposit HfO x Support layer.

[0089] Using PVD reactive sputtering at a vacuum of 5e -6 Torr, the sputtering power is 100W, the pulse frequency is 100Hz, the pulse width is 2μs, the gas pressure is 4mTorr, the oxygen-argon ratio is 18%, and the sputtering time is 800s. 20% HfO with argon ratio x Su...

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PUM

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Abstract

The invention discloses a laminated HfO2-based resistive random access memory for improving current overshoot, and a manufacturing method thereof. The laminated HfO2-based resistive random access memory comprises a substrate (1), a bottom electrode (2) and a top electrode (5) from bottom to top, wherein an HfOx oxygen supplying layer (3) having a thickness of 30 to 40 nm and an oxygen-argon ratioof 15 to 20% and an HfOy resistive layer (4) having a thickness of 10 to 20 nm and an oxygen-argon ratio of 40 to 45% are sequentially arranged between the bottom electrode (2) and the top electrode (5); a lot of oxygen vacancy defects exist in the HfOx oxygen supplying layer (3), and the HfOx oxygen supplying layer (3) serves as an oxygen vacancy ''water pump''; and the HfOy resistive layer (4) is used for realizing formation and fracture of conductive filaments, and completing the switching between high and low resistance states. The laminated HfO2-based resistive random access memory optimizes components of the resistive layer HfOy dielectric thin film to change quality thereof, controls the defects in the dielectric, and improves the device performance, thereby improving the current overshoot effect, and being applicable to the manufacturing of large-scale integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a laminated HfO which can improve the current overshoot effect 2 The base resistance variable memory and its manufacturing method can be used in the manufacturing of large-scale integrated circuits. Background technique [0002] HfO 2 The wide application in CMOS high-k technology makes it a very important material in the research of RRAM. High-k materials with the same physical thickness can effectively reduce the equivalent oxide thickness EOT, achieve greater capacitive coupling and increase the electric field capability, thereby achieving the purpose of reducing device size and improving device performance. [0003] Some research groups believe that based on HfO 2 The resistive switching mechanism of the RRAM material is the formation / breakage of conductive filaments caused by the migration of oxygen ions or oxygen vacancies. During the initial filament formation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/8833H10N70/026H10N70/011
Inventor 高海霞马匆匆谷茜茜杨银堂
Owner XIDIAN UNIV
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