Polishing method of semiconductor wafer

Abstract

The invention provides a polishing method of a semiconductor wafer. The polishing method of the semiconductor wafer sequentially comprises the following steps: S1, primarily polishing the front side and the reverse side of the semiconductor wafer simultaneously; S2, forming an annular oxidation layer on each of the front side and the reverse side of the semiconductor wafer, wherein the annular oxidation layers cover the outer circumferential areas, near the edge, of the front side and the reverse side of the semiconductor wafer; S3, performing mirror polishing on the edge of the semiconductorwafer and removing the annular oxidation layers; and S4, performing mirror polishing on the front side or the front side and the reverse side of the semiconductor wafer. By the polishing method of thesemiconductor wafer, excessive polishing of the area, near the edge, of the surface of the semiconductor wafer in the edge polishing step can be avoided; furthermore, after the edge of the semiconductor wafer is polished, the annular oxidation layers are completely removed and influence on the subsequent polishing step is avoided, so the method is simple, economic and practical.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for polishing a semiconductor wafer. Background technique [0002] In the semiconductor manufacturing process, the polishing of wafers usually requires the following steps: [0003] 1. Double-sided polishing, that is, polishing the front and back sides of the wafer at the same time. [0004] 2. Edge polishing, that is, to perform partial mirror polishing on the edge of the wafer. [0005] 3. Final polishing, that is, mirror polishing is performed on the front or both sides of the wafer. For wafers with a diameter of more than 300mm, the final mirror polishing is usually only performed on the front. [0006] Step 2 is usually performed after step 1, and is used to remove possible wafer edge damage caused by step 1. In step 2, the polishing pad is not only in contact with the edge of the wafer, but often also with the edge of the wafer surface, resul...

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Problems solved by technology

[0009] In view of the prior art described above, the object of the present invention is to provide a semiconductor wafer polishing method for solving the problem in the prior art that the edge region is easily over-polished during wafer polishing

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