Substrate processing apparatus

Abstract

A substrate processing apparatus includes a cavity having a substrate processing space and a coil portion having a plurality of inductance coils each of which has a shape winding the outer circumference of the cavity and is arranged at the extending direction of the cavity. The plurality of inductance coils include margin type inductance coils forming plasma in the cavity, with the density of theplasma in a zone corresponding to a margin zone of the substrate being higher than the density of the plasma in a zone corresponding to the central zone of the substrate; and central type inductance coils forming plasma in the cavity, with the density of the plasma in the zone corresponding to a central zone of the substrate being higher than the density of the plasma in a zone corresponding to the margin zone of the substrate. Effects of increasing plasma spatial uniformity and increasing substrate processing uniformity are achieved in embodiments. Through stacking and mounting the pluralityof inductance coils at the vertical direction, a capacity of plasma formed corresponding to a substrate processing surface is increased, and the plasma density changing along with processing zones isincreased.

Description

technical field [0001] The present invention relates to a substrate processing device, and more particularly relates to a substrate processing device capable of improving plasma uniformity. Background technique [0002] A substrate processing apparatus using plasma is an apparatus that performs substrate processing (such as substrate cleaning, etching, or deposition) on a substrate using a physical reaction or a chemical reaction (such as a plasma phenomenon) in a vacuum state. In general, during substrate processing by a substrate processing apparatus, reactive gas is injected into a chamber to perform substrate processing, and by applying power, the injected reactive gas forms plasma in the chamber, and is utilized in The material in the plasma state (such as radicals) formed in the chamber performs substrate processing (such as etching or deposition) on the surface of the substrate according to the purpose of the substrate processing. [0003] Among substrate processing ...

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Problems solved by technology

This can result in reduced process uniformity during cleaning, etching, or deposition of the treated side of the substrate

[0006] In addition, in order to increase the plasma capacity, the power supply power applied to the induction coil is increased in the prior art

However, this method excessively heats the inductor coil to cause damage due to loss, thereby causing a problem that the performance of the inductor coil is lowered or the efficiency of plasma generation is lowered.

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