Method for dry-etching silicon groove

Abstract

Disclosed is a method for dry-etching a silicon groove. The invention relates to the field of semiconductor manufacturing technology, and provides a method for dry-etching a silicon groove, which hasthe characteristics of simple operation, clear and orderly processing steps, no secondary cleaning, and no "silicon grass" production after processing. The method is operated by the steps of 1) photoresist placement: placing a photoresist according to the position of a predetermined pattern; 2) mask layer preparation: etching a plurality of trenches on silicon oxide by Ar, CHF3 and CF4 to form a mask layer; 3) silicon groove etching: physically etching the silicon by Cl2, SF6 and Ar under the action of a high-frequency electric field; and ending. The method of the invention has the characteristics of simple operation, clear and orderly processing steps, no secondary cleaning, high product quality and good product quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing. Background technique [0002] As the main component of semiconductor chips, silicon is usually processed by NF 3 , HBR, HE, O 2 Dry etching is performed, and the sidewall of the etched silicon groove has a certain inclination angle by forming a brominated polymer during the etching process. However, because the brominated polymer will continue to accumulate on the sidewalls of the silicon trench during production, excessive accumulation will cause the ions to re-sputter a large amount of the polymer onto the surface of the silicon, forming a large number of " "Silicon Grass", causing device failure, brought a huge additional increase to the scrap rate. [0003] In addition, during the etching process of the silicon groove, a large amount of silicon-containing brominated polymers will adhere to the inner wall of the processing equipment, so that the operator needs to clean t...

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Problems solved by technology

However, because the brominated polymer will continue to accumulate on the sidewalls of the silicon trench during production, excessive accumulation will cause the ions to re-sputter a large amount of the polymer onto the surface of the silicon, forming a large number of " "Silicon Grass", which causes device failure and brings a huge additional increase to the scrap rate

[0003] In addition, during the etching process of the silicon groove, a large amount of silicon-containing brominated polymers will adhere to the inner wall of the processing equipment, so that the operator needs to clean the processing equipment for the second time after processing, which will shorten the processing cycle and processing time. cost has a huge impact on

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