Manufacturing method of sensor and sensor manufactured by same

Abstract

The invention provides a manufacturing method of a sensor. The manufacturing method comprises a device forming step; the device forming step comprises a gas sensitive device forming step; the gas sensitive device forming step comprises a heating resistor forming step, a gas sensitive resistor forming step and a first cavity forming step; and the gas sensitive resistor forming step comprises a gassensitive resistor electrode forming step and a gas sensitive layer forming step. The invention further provides the sensor. A gas sensor manufactured by the manufacturing method of the sensor provided by the invention has the following characteristics: 1), silicon oxide is used as a sacrificial layer, and a cavity can be formed in a very shallow range on the silicon surface, so that a miniature heating resistor on the cavity is very good in thermal insulation; and 2), a CMP (Chemical Mechanical polishing) technology is used for grinding the sacrificial layer and the silicon surface, so that the structure of the heating resistor is flattened, and the thermal stress caused by heating is reduced, thus the structure is more reliable and the like.

Description

technical field [0001] The present invention relates to a manufacturing method, in particular to a sensor manufacturing method and the sensor manufactured by the method, especially to a gas sensor manufacturing method and the gas sensor manufactured by the method. Background technique [0002] The quality of the environment is closely related to the comfort and health of people's life and work. In recent years, as people's requirements for the environment have become higher and higher, people hope to have simple, reliable, and cheap methods and products to detect the quality of ambient air, such as carbon monoxide, flammable gases, ethanol, nitrogen dioxide, etc. Or the concentration of toxic gases in the air. It is a relatively common method to measure gas species and concentration by using the gas-sensing properties of metal oxides at high temperatures. However, this type of sensor generally requires a MEMS (Micro-Electro-Mechanical System, micro-electro-mechanical syste...

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Problems solved by technology

Therefore, the structure of the general gas sensor is relatively complex, which has the following two disadvantages: in order to achieve thermal isolation of the gas sensor, it is necessary to use the MEMS process to make a silicon cavity through the silicon substrate, the process flow is more complicated, and it is different from the traditional integrated circuit Process incompatibility, poor structural stability and reliability, and high cost

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