Ultra-wideband optical perfect absorber and preparation method thereof
An ultra-broadband and absorber technology, applied in the optical field, can solve the problems of narrow wavelength range, inability to further expand the absorption bandwidth, difficult multi-band optical resonance absorption, etc., to achieve the effect of ultra-broadband and perfect optical absorption
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[0050] In order to achieve the above object, the present invention also provides a preparation method of an ultra-broadband optical perfect absorber, the preparation method specifically comprising:
[0051] Prepare a titanium nitride film layer 2 on the substrate 1;
[0052] Depositing a dielectric film layer 3 on the upper surface of the titanium nitride film layer 2 by physical deposition;
[0053] Depositing a titanium nitride film layer on the upper surface of the dielectric film layer 3 by physical deposition;
[0054] Depositing a titanium oxide film layer on the upper surface of the titanium nitride film layer by physical deposition method;
[0055] The titanium nitride film layer and the titanium oxide film layer are etched simultaneously to obtain the titanium nitride particle array 4 and the titanium oxide particle array 5 .
[0056] Optionally, the method for preparing the titanium nitride film layer 2 on the substrate 1 is a chemical growth method or a physical dep...
Embodiment 1
[0060] An ultra-broadband optical perfect absorber, including a substrate 1, the material of the substrate 1 is a silicon wafer, and a titanium nitride film layer 2, a dielectric film layer 3 and a nitrogen film layer are sequentially arranged on the substrate 1 from bottom to top. Titanium oxide-titanium oxide structural layer;
[0061] The thickness of the titanium nitride film layer 2 is 100 nanometers, the material of the dielectric film layer 3 is silicon dioxide, and the thickness of the dielectric film layer 3 is 50 nanometers; the thickness of the titanium nitride-titanium oxide structural layer is 50 nm.
[0062] The titanium nitride-titanium oxide structural layer includes a titanium nitride particle array 4 and a titanium oxide particle array 5, the titanium nitride particle array 4 is arranged on the upper surface of the dielectric film layer 3, and the titanium oxide particle array 5 is arranged on the upper surface of the titanium nitride particle array 4 .
[...
Embodiment 2
[0067] An ultra-broadband optical perfect absorber, including a substrate 1, the material of the substrate 1 is quartz, and the substrate 1 is sequentially provided with a titanium nitride film layer 2, a dielectric film layer 3 and a nitride film layer from bottom to top. Titanium-titanium oxide structural layer;
[0068] The thickness of the titanium nitride film layer 2 is 250 nanometers, and the material of the dielectric film layer 3 is silicon dioxide, and the thickness of the dielectric film layer 3 is 50 nanometers; the thickness of the titanium nitride-titanium oxide structural layer is 50 nm.
[0069] The titanium nitride-titanium oxide structural layer includes a titanium nitride particle array 4 and a titanium oxide particle array 5, the titanium nitride particle array 4 is arranged on the upper surface of the dielectric film layer 3, and the titanium oxide particle array 5 is arranged on the upper surface of the titanium nitride particle array 4 .
[0070] Such ...
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