Laminated two-color infrared focal plane detector and preparation method thereof

An infrared focal plane and detector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of incomplete absorption of incident infrared light, limited channel growth thickness, etc., to achieve easy DBR production, The effect of improving photoelectric absorption efficiency and improving device performance indicators

Active Publication Date: 2018-02-16
中航凯迈上海红外科技有限公司
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a stacked two-color infrared focal plane detector to solve the problem that the current stacked two-color infrared focal plane detector cannot completely absorb the incident infrared light due to the limited growth thickness of the channel; the present invention also provides A kind of preparation method of stacked two-color infrared focal plane detector

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  • Laminated two-color infrared focal plane detector and preparation method thereof
  • Laminated two-color infrared focal plane detector and preparation method thereof

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Embodiment Construction

[0030] The specific embodiments of the present invention will be further described below in conjunction with the drawings.

[0031] Embodiment of a laminated two-color infrared focal plane detector of the present invention

[0032] The present invention adopts a mirror layer for both channels of the laminated two-color infrared detector to improve the photoelectric absorption efficiency of the corresponding channels. Such as figure 1 As shown, the stacked two-color infrared focal plane detector of the present invention includes a substrate 101. On the substrate 101, there are an epitaxial buffer layer 102, a first channel electrode layer 103, a first channel epitaxial structure layer 104, and a first channel reflection layer. The mirror layer 105, the common electrode layer 106, the second channel epitaxial structure layer 107, the cap layer 108, the second channel electrode layer 109 and the second channel mirror layer 110, the center wavelength of the first channel epitaxial stru...

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Abstract

The invention relates to a laminated two-color infrared focal plane detector and a preparation method thereof and belongs to the technical field of semiconductor photoelectronic devices. A distributedBragg reflector structure is introduced into a laminated InAs / GaSb two-color superlattice structure photosensitive chip; and infrared light, which is not completely absorbed, of laminated two-color photosensitive absorption regions is reflected separately, so that the infrared light returns to the absorption regions again. Reflector layers are adopted by two channels of the laminated two-color infrared detector, so that the photoelectric absorption efficiency of the corresponding channel of the chip is improved and the target of improving the performance index of the device is achieved, and meanwhile, the difficulty in epitaxial growth of a first channel epitaxy structure layer and a second channel epitaxy structure layer is correspondingly reduced.

Description

Technical field [0001] The invention relates to a laminated two-color infrared focal plane detector and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. Background technique [0002] With the advancement of infrared technology, the demand for laminated two-color infrared detection devices is increasing. The use of stacked two-color infrared detectors, compared to the use of separate detectors or parallel mosaic infrared detectors, the infrared system has significant advantages in the simultaneous acquisition of target information and the same spatial location. This kind of detector can make the prepared infrared system have the characteristics of compact structure, low power consumption, and easy realization of optical common-aperture detection. For the typical laminated two-color infrared detector photosensitive chip structure, the InAs / GaSb type two superlattice structure is a chip structure that has received widespread ...

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Application Information

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IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/101H01L31/18Y02P70/50
Inventor 司俊杰曹先存鲁正雄张利学侯治锦吕衍秋
Owner 中航凯迈上海红外科技有限公司
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