Preparing method for nano metal particle array structures

A technology of nano-metal particles and array structure, which is applied in the field of nano-electrochemistry, can solve the problems such as the limited range of nano-metal particle array regulation and the inability to achieve small spacing adjustment below 20nm.

Inactive Publication Date: 2018-01-23
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a method for preparing a nano-metal particle array structure, which solve...

Method used

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  • Preparing method for nano metal particle array structures
  • Preparing method for nano metal particle array structures
  • Preparing method for nano metal particle array structures

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preparation example Construction

[0033] Based on the above problems, an embodiment of the present invention provides a method for preparing a nano-metal particle array structure, comprising the following steps:

[0034] S1. Select an ion sputtering apparatus, place it on the sample loading platform, correct the ion sputtering apparatus, and perform vacuuming operation on the ion sputtering apparatus;

[0035] S2. Using polystyrene balls as templates and metal targets as initial materials, place polystyrene balls on the sample loading platform, rotate the sample loading platform, reduce the vacuum degree in the ion sputtering instrument, and inject ions The shielding gas is introduced into the sputtering apparatus, and then the metal target is vapor-deposited on the surface of the polystyrene pellets with electricity;

[0036] S3. Heating the polystyrene pellets evaporated in S2 to 600-700° C., and keeping it warm at this temperature for 40-50 minutes, that is, depositing nanometer metal particle arrays on the...

Embodiment 1

[0049] A method for preparing a nanometer metal particle array structure, comprising the following steps: S1. Select an ion sputtering apparatus, place it on a sample loading platform, correct the ion sputtering apparatus, and perform a vacuuming operation on the ion sputtering apparatus, and vacuumize the ion sputtering apparatus. The degree is 0.01mpa;

[0050] S2. Using polystyrene pellets as a template, the surface of the polystyrene pellets was cleaned with ethanol and deionized water in an ultrasonic state, and then ventilated and dried in the air at 30°C. The silver target was used as the initial material. Place the polystyrene pellets on the sample stage, rotate the sample stage at a speed of 800rpm, reduce the vacuum in the ion sputtering instrument at a rate of 5pa / min until the vacuum in the ion sputtering instrument is 50pa , and the shielding gas neon was introduced into the ion sputtering apparatus, and then the silver target was evaporated onto the surface of po...

Embodiment 2

[0054] A method for preparing a nanometer metal particle array structure, comprising the following steps: S1. Select an ion sputtering apparatus, place it on a sample loading platform, correct the ion sputtering apparatus, and perform a vacuuming operation on the ion sputtering apparatus, and vacuumize the ion sputtering apparatus. The degree is 0.01mpa;

[0055] S2. Using polystyrene pellets as templates, the surface of polystyrene pellets was cleaned with ethanol and deionized water under ultrasonic conditions, and then ventilated and dried in air at 31°C. Silver targets were used as initial materials. Place the polystyrene balls on the sample stage, rotate the sample stage at 820rpm, reduce the vacuum in the ion sputtering instrument, and reduce it at a rate of 5pa / min until the vacuum in the ion sputtering instrument is 50pa , and the shielding gas neon was introduced into the ion sputtering apparatus, and then the silver target was evaporated onto the surface of polystyre...

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Abstract

The invention provides a preparing method for nano metal particle array structures, and belongs to the technical field of nano electrochemistry. The preparing method includes the following steps that1, an ion sputtering apparatus is selected, installed and placed on a loading table, and the ion sputtering apparatus is corrected; 2, polystyrene spheres are used as templates, a metal target material is used as an initial material, the polystyrene spheres are placed on the loading table, the loading table is rotated and then powered on, and the metal target material is evaporated onto the surfaces of the polystyrene spheres; 3 the evaporated polystyrene spheres are heated to 600-700 DEG C for heat preservation, and nano metal particle arrays are deposited on the surfaces of the polystyrene spheres; and 4, the polystyrene spheres are dissolved, and nano metal particle ordered arrays are obtained. According to the nano metal particle array structure, by sputtering the polystyrene spheres at a rotating state, the spacing being less than 20nm of the nano particle array structures of film coating on the surfaces of the polystyrene spheres is adjusted.

Description

technical field [0001] The invention relates to the technical field of nanometer electrochemistry, in particular to a method for preparing a nanometer metal particle array structure. Background technique [0002] For the structure of nano-metal particles, compared with common bulk materials, nano-metal particles will exhibit unique physical and chemical properties. Especially for nanoparticle arrays arranged in an orderly manner, by modifying the structure of the nanometal particle array, the array of nanometal particles can be made to a certain extent suitable for magnetic storage disks, array electronic devices, detectors and other fields. It has important applications. For example, on the current gas sensing device, a layer of nanoparticle film is usually coated on the surface of the gas sensing device, and then according to the special effect of the orderly arrangement of nanoparticles between the films and the contact between the gas contact surface, the gas composition...

Claims

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Application Information

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IPC IPC(8): C23C14/20C23C14/50C23C14/46C23C14/32B82Y40/00
Inventor 孔明光吴兵刘玲
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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