Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fluorescence detection circuit based on silicon photodiode

A technology of silicon photodiode and fluorescence detection, which is applied in the field of detection, achieves the effect of compact circuit structure, improving work efficiency and making up for the lack of sensitivity

Inactive Publication Date: 2017-12-29
何志杰
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As the photoelectric conversion device of the fluorescence detection system, the PMT module has the advantages of high sensitivity, low noise, and fast response. However, due to its special structure, it is easily disturbed by the external electromagnetic field, and its power supply voltage must have good stability. , small ripple, drift and temperature coefficient
Explain that the PMT module has certain limitations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fluorescence detection circuit based on silicon photodiode
  • Fluorescence detection circuit based on silicon photodiode
  • Fluorescence detection circuit based on silicon photodiode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention will be further described below in conjunction with drawings and embodiments.

[0016] Such as figure 1 , the LED drive circuit selects the op amp OP-07 and connects it into a proportional amplifier circuit in the same direction, and obtains a stable load driving capability and a reasonable bias adjustment, so that the high level of the square wave is 3.4 V, and the low level is 3.4 V. 0V, and then drive the load composed of LED and current limiting resistor connected in series.

[0017] Such as figure 2 , the probe circuit uses OPA129 op amp and the probe amplifier circuit is an I-V converter, and the gain should provide pA}mV amplification requirements. At the same time, the bandwidth of the system should be expanded as much as possible, and each frequency component of the step signal should be amplified with little distortion. The size of the mutual resistance gain is determined by the feedback resistor Rf. In this circuit, A is the open-lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
Login to View More

Abstract

A fluorescence detection circuit based on a silicon photodiode is suitable for the field of detection. The fluorescent detection circuit is controlled by SST89E516RD single-chip microcomputer, which is composed of LED drive circuit, probe circuit and high-frequency compensation circuit. The circuit structure is compact, the occupied volume is small, the circuit detection accuracy is high, the work is stable, and it is not easily affected by the external environment, which improves the work efficiency and makes up for the shortcomings of silicon PD's lack of sensitivity.

Description

Technical field [0001] The invention relates to a fluorescence detection circuit based on a silicon photodiode, which is suitable for the detection field. Background technique [0002] With the development of contemporary life sciences, there is an urgent need for ultra-high sensitivity life activity detection methods. Since the 1980s, the vigorous development of microscopic imaging technology has promoted the continuous improvement of research methods in the fields of biophysics and biophotonics. Compared with general optical microscopy systems with limited resolution, fluorescence microscopy systems can obtain higher resolution images of intracellular mitochondria, Golgi complexes, endoplasmic reticulum, lysosomes and other organelles, and can dynamically observe Morphological changes of cell organelles. At present, the fluorescence microscopy system has been widely used in the detection of intracellular free ion concentration, cell tomography and so on. Due to its fast...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/64
CPCG01N21/64G01N21/6408G01N21/6489
Inventor 何志杰
Owner 何志杰
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com