Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the steps of: providing a substrate; forming a top metal layer having a first opening on the substrate; forming a first bottom passivation layer positioned on the substrate at the bottom part of the first opening, and a second bottom passivation layer positioned on the top metal layer and separated from the first bottom passivation layer; forming a conductive layer covering the top metal layer, the first bottom passivation layer and the second bottom passivation layer, wherein the conductive layer has a second opening, and the side wall of the second opening is level with the side wall of the first bottom passivation layer; and forming a top passivation layer on the bottom part and side wall of the second opening and part of the conductive layer. Through forming the first bottom passivation layer and the second bottom passivation layer, the side wall of the second opening in the conductive layer is level with the side wall of the first bottom passivation layer, thus the conductive layer has no corners in the top part corner region of the first bottom passivation layer, and the fracture problem of a top passivation layer in the top part corner region because the top passivation layer bears overlarge stress is reduced.

Description

Technical field [0001] The present invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In the manufacturing process of semiconductor structures, passivation of the surface of semiconductor structures is one of the key technologies. By forming a passivation layer on the surface of the semiconductor structure, various charges in the internal oxide layer of the semiconductor structure can be reduced, the semiconductor structure's ability to block ion contamination is enhanced, and the interconnection of the internal devices of the semiconductor structure and the electrical characteristics of the surface of the semiconductor structure can be protected , Prevent the device of the semiconductor structure from mechanical damage or chemical damage. [0003] However, the formation quality of the passivation layer in the prior art is poor. Summary of the invention [0004] The problem ...

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Problems solved by technology

[0003] However, the formation quality of the prior art passivation layer is poor

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