Trench gate RC-IGBT and preparation method thereof

Abstract

The invention discloses a trench gate RC-IGBT. The trench gate RC-IGBT comprises N<+> emitting electrodes, P<+> emitting electrodes, P-base regions and an N<-> layer which are sequentially arranged from top to bottom; the P<+> emitting electrodes are arranged on the upper surfaces of the P-base regions, the P<+> emitting electrodes and the N<+> emitting electrodes are arranged side by side, a plurality of grooves are etched on the upper surface of the N<-> layer, SiO2 gate-oxide layers are arranged in the grooves, polysilicon gates are deposited on the SiO2 gate-oxide layers, the P<+> emitting electrodes, the N<+> emitting electrodes and the P-base regions are located on the same sides of the corresponding grooves, and both the side walls of the N<+> emitting electrodes and the side walls of the P-base regions make contact with the outer surfaces of the side walls of the corresponding grooves; and an N buffer layer is arranged on the back face of the N<-> layer, a P<+> collector is arranged on the back face of the N buffer layer, an N<+> collector is arranged on one side of the P<+> collector, and a plurality of P column regions are arranged on the upper surface of the N<+> collector. According to the trench gate RC-IGBT, the problems that in the prior art, current distribution is non-uniform when a traditional RC-IGBT works forwards, and the reverse recovery peak current is too large when the traditional RC-IGBT works reversely are solved, and the forward voltage drop of devices is significantly reduced by means of the RC-IGBT with the novel structure.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a trench gate RC-IGBT, and also relates to a preparation method of the trench gate RC-IGBT. Background technique [0002] As electrical energy is widely used in various fields, the power electronics technology developed thereupon is dedicated to the efficient conversion and control of energy, and the power electronic system is determined by power switching semiconductor devices. Therefore, power switching semiconductor devices are the core of the development of contemporary power electronics technology. Power switching semiconductor devices have been developing and advancing along the direction of ideal power switches. The so-called ideal switches specifically refer to low drive power consumption, low on-off state loss, and low conduction loss. IGBT has the advantages of high input impedance of insulated gate field effect transistor, low turn-on v...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a trench gate RC-IGBT, which can greatly reduce the turn-on voltage drop of the device, and solve the problems of the traditional RC-IGBT in the prior art. The problem of excessive reverse recovery peak current when working backward

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